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Suk B. Ma Patents
Inventor:
Ma; Suk B.
Address:
Seoul, KR
No. of patents:
1
Patents:




Patent Number Title Of Patent Date Issued
5344796 Method for making polycrystalline silicon thin film September 6, 1994
A method for making a polycrystalline silicon thin film by crystallizing an amorphous silicon thin film at a low temperature of 500.degree. C. to 600.degree. C. Over a glass substrate is deposited a microcrystalline silicon seed layer having a thickness of 100 .ANG. to 500 .ANG., usin


 
 
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