| Patent Number |
Title Of Patent |
Date Issued |
| 7416918 |
Direct build-up layer on an encapsulated die package having a moisture barrier structure |
August 26, 2008 |
| A packaging technology that fabricates a microelectronic package including build-up layers, having conductive traces, on an encapsulated microelectronic die and on other packaging material that surrounds the microelectronic die, wherein an moisture barrier structure is simultaneously |
| 7411269 |
Isolation structure configurations for modifying stresses in semiconductor devices |
August 12, 2008 |
| An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of |
| 7410858 |
Isolation structure configurations for modifying stresses in semiconductor devices |
August 12, 2008 |
| An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of |
| 7410763 |
Multiplex data collection and analysis in bioanalyte detection |
August 12, 2008 |
| Method and device to collect multiplex data simultaneously in analyte detection and analyze the data by experimentally trained software (machine-learning) is disclosed. Various ways (magnetic particles and microcoils) are disclosed to collect multiple reporter (tag) signals. Multiple |
| 7358615 |
Microelectronic package having multiple conductive paths through an opening in a support substra |
April 15, 2008 |
| Microelectronic packages are disclosed. A microelectronic package may include a substrate having first and second sides. Passive components may be located on the first side of the substrate. Interconnects may also be located on the first side of the substrate, and may be electrically |
| 7358580 |
Sacrificial layer technique to make gaps in MEMS applications |
April 15, 2008 |
| A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrifi |
| 7358579 |
Reducing the actuation voltage of microelectromechanical system switches |
April 15, 2008 |
| A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is neede |
| 7348928 |
Slot antenna having a MEMS varactor for resonance frequency tuning |
March 25, 2008 |
| Briefly, in accordance with one embodiment of the invention, a slot antenna may include a primary slot and one or more secondary slots. The size of the antenna may be reduced by adding one or more of the secondary slots which may add additional inductance to the antenna. Furthermore, |
| 7332061 |
Integration of multiple frequency band FBAR filters |
February 19, 2008 |
| A method and system for forming FBAR filters for different frequency bands with film stacks of different thicknesses, where at least some layers of different thicknesses are formed substantially at the same time, during a process operation are described herein. |
| 7321275 |
Ultra-low voltage capable zipper switch |
January 22, 2008 |
| An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is |
| 7291561 |
MEMS device integrated chip package, and method of making same |
November 6, 2007 |
| The present invention relates to a chip package that includes a semiconductor device and at least one micro electromechanical structure (MEMS) such that the semiconductor device and the MEMS form an integrated package. One embodiment of the present invention includes a semiconductor |
| 7245057 |
Micro-electromechanical structure resonator frequency adjustment using radiant energy trimming a |
July 17, 2007 |
| The invention relates to a microbeam oscillator. Tuning of the oscillator is carried out by addition or subtraction of material to an oscillator member in order to change the mass of the oscillator member. |
| 7218188 |
Microelectromechanical apparatus and methods for surface acoustic wave switching |
May 15, 2007 |
| Microelectromechanical system (MEMS) apparatus and methods for surface acoustic wave (SAW) switching are disclosed. The apparatus includes a piezoelectric substrate having spaced apart input and output SAW transducers. A MEMS switch is arranged between the input and output SAW transd |
| 7189596 |
Process for forming a direct build-up layer on an encapsulated die packages utilizing intermedia |
March 13, 2007 |
| A method of fabricating microelectronic dice by providing or forming a first encapsulated die assembly and a second encapsulated die assembly. Each of the encapsulated die assemblies includes at least one microelectronic die disposed in a packaging material. Each of the encapsulated |
| 7183622 |
Module integrating MEMS and passive components |
February 27, 2007 |
| An apparatus may include a first substrate, one or more microelectromechanical systems (MEMS) coupled to the first substrate, a second substrate coupled with the first substrate, and one or more passive components coupled to the second substrate. A method may include aligning a first |
| 7173203 |
Integrated microsprings for speed switches |
February 6, 2007 |
| An integrated microspring switch may be provided for relatively high frequency switching applications. A spring arm may be formed over a microspring dimple, which may be hemispherical and hollow in one embodiment. When the spring arm contacts the dimple, the spring dimple may resilie |
| 7154358 |
Film bulk acoustic resonator structure and method of making |
December 26, 2006 |
| A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the |
| 7152289 |
Method for forming bulk resonators silicon <110> substrate |
December 26, 2006 |
| A method for forming a device on a substrate of <110> silicon includes forming a first conductive layer onto the substrate, and forming a piezoelectric layer on the first portion of a first conductive layer. A second electrode is formed on the piezoelectric layer, and a backside |
| 7030432 |
Method of fabricating an integrated circuit that seals a MEMS device within a cavity |
April 18, 2006 |
| A method of fabricating an integrated circuit that includes a microelectromechanical (MEMS) device. The method includes forming a MEMS device on a substrate and forming an integrated circuit. The method further includes coupling the substrate to the integrated circuit to form a seale |
| 7026562 |
Protected switch and techniques to manufacture the same |
April 11, 2006 |
| Briefly, micromechanical system (MEMS) switches that utilize protective layers to protect electrical contact points. |
| 7005314 |
Sacrificial layer technique to make gaps in MEMS applications |
February 28, 2006 |
| A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrifi |
| 7002436 |
Vacuum-cavity MEMS resonator |
February 21, 2006 |
| A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing |
| 6995440 |
MEMS switch having hexsil beam and method of integrating MEMS switch with a chip |
February 7, 2006 |
| A microelectromechanical system (MEMS) switch has a beam with a high-resonance frequency. The MEMS switch includes a substrate having an electrical contact and a hexsil beam coupled to the substrate in order to transfer electric signals between the beam and the contact when an actuat |
| 6980412 |
Variable tunable range MEMS capacitor |
December 27, 2005 |
| The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plat |
| 6975184 |
Adjusting the frequency of film bulk acoustic resonators |
December 13, 2005 |
| A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom |
| 6972650 |
System that includes an electrode configuration in a MEMS switch |
December 6, 2005 |
| A microelectromechanical system (MEMS) switch that includes a signal contact, an actuation electrode and a beam that engages the signal contact when a voltage is applied to the actuation electrode. The signal contact includes a first portion and a second portion. The actuation electrode |
| 6967548 |
Microelectromechanical (MEMS) switching apparatus |
November 22, 2005 |
| This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a di |
| 6964889 |
Method to protect an encapsulated die package during back grinding with a solder metallization l |
November 15, 2005 |
| A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s). A portion of the encapsulation material is removed to expose a back surface of the microelectronic die |
| 6954020 |
Apparatus for adjusting the resonance frequency of a microelectromechanical (MEMS) resonator usi |
October 11, 2005 |
| A method for varying the resonance frequency of a resonator beam is disclosed. The method comprises first manufacturing a resonator beam having a first end and a second end. The resonator beam is suspended above a substrate by the first end and the second end. At least one end of the |
| 6949268 |
Frequency uniformity of film bulk acoustic resonators |
September 27, 2005 |
| The frequency uniformity of a film bulk acoustic resonator may be improved by controlling the thickness across a wafer of one or more layers of the film bulk acoustic resonator. One or more layers of the film bulk acoustic resonator may be deposited in a way that irregularities in the de |
| 6943648 |
Methods for forming a frequency bulk acoustic resonator with uniform frequency utilizing multipl |
September 13, 2005 |
| A method of forming a tuned resonator structure by first forming a base resonator structure that comprises a trimming layer on a resonator structure, wherein the trimming layer comprises at least one first low loss acoustic layer on the resonator structure, and at least one second lo |
| 6940367 |
Forming film bulk acoustic resonator filters |
September 6, 2005 |
| A film bulk acoustic resonator may be formed with a piezoelectric film having improved quality. The piezoelectric film may be deposited directly onto a single crystal silicon substrate. That substrate may be removed and selectively replaced with a lower electrode to form the film bulk ac |
| 6940363 |
Switch architecture using MEMS switches and solid state switches in parallel |
September 6, 2005 |
| In a switching scheme mechanical MEMs switches are connected in parallel with solid state switches. This parallel MEMS/solid-state switch arrangement takes advantage of the fast switching speeds of the solid state switches as well advantage of the improved insertion loss and isolatio |
| 6936780 |
Protected switch and techniques to manufacture the same |
August 30, 2005 |
| Briefly, micromechanical system (MEMS) switches that utilize protective layers to protect electrical contact points. |
| 6933808 |
Microelectromechanical apparatus and methods for surface acoustic wave switching |
August 23, 2005 |
| Microelectromechanical system (MEMS) apparatus and methods for surface acoustic wave (SAW) switching are disclosed. The apparatus includes a piezoelectric substrate having spaced apart input and output SAW transducers. A MEMS switch is arranged between the input and output SAW transd |
| 6914335 |
Semiconductor device having a low-K dielectric layer |
July 5, 2005 |
| An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the |
| 6903452 |
Packaging microelectromechanical structures |
June 7, 2005 |
| A microelectromechanical system may be enclosed in a hermetic cavity defined by joined, first and second semiconductor structures. The joined structures may be sealed by a solder sealing ring, which extends completely around the cavity. One of the semiconductor structures may have th |
| 6902950 |
Method to protect an encapsulated die package during back grinding with a solder metallization l |
June 7, 2005 |
| A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s). A portion of the encapsulation material is removed to expose a back surface of the microelectronic die |
| 6890829 |
Fabrication of on-package and on-chip structure using build-up layer process |
May 10, 2005 |
| The invention relates to a process of forming an on-chip package inductor. The process includes providing a substrate with at least one microelectronic device packaged therewith. As part of the inventive process, electrical communication is formed for the microelectronic device. The |
| 6880235 |
Method of forming a beam for a MEMS switch |
April 19, 2005 |
| A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic |
| 6876053 |
Isolation structure configurations for modifying stresses in semiconductor devices |
April 5, 2005 |
| An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of |
| 6861783 |
Structure to achieve high-Q and low insertion loss film bulk acoustic resonators |
March 1, 2005 |
| A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface |
| 6861599 |
Integrated microsprings for speed switches |
March 1, 2005 |
| An integrated microspring switch may be provided for relatively high frequency switching applications. A spring arm may be formed over a microspring dimple, which may be hemispherical and hollow in one embodiment. When the spring arm contacts the dimple, the spring dimple may resilie |
| 6852926 |
Packaging microelectromechanical structures |
February 8, 2005 |
| A MEMS device may be formed in a hermetic cavity by sealing a pair of semiconductor structures to one another, enclosing the MEMS device. The two structures may be coupled using surface mount techniques as one example, so that the temperatures utilized may be compatible with many MEM |
| 6850133 |
Electrode configuration in a MEMS switch |
February 1, 2005 |
| A microelectromechanical system (MEMS) switch that includes a signal contact, an actuation electrode and a beam that engages the signal contact when a voltage is applied to the actuation electrode. The signal contact includes a first portion and a second portion. The actuation electrode |
| 6825428 |
Protected switch and techniques to manufacture the same |
November 30, 2004 |
| Briefly, micromechanical system (MEMS) switches that utilize protective layers to protect electrical contact points. |
| 6825063 |
Integrated core microelectronic package |
November 30, 2004 |
| A microelectronic package including a microelectronic die disposed within an opening in a microelectronic packaging core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic die. Build-up layers of dielectric materials and |
| 6822535 |
Film bulk acoustic resonator structure and method of making |
November 23, 2004 |
| A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the lay |
| 6816035 |
Forming film bulk acoustic resonator filters |
November 9, 2004 |
| A film bulk acoustic resonator may be formed with a piezoelectric film having improved quality. The piezoelectric film may be deposited directly onto a single crystal silicon substrate. That substrate may be removed and selectively replaced with a lower electrode to form the film bulk ac |
| 6812814 |
Microelectromechanical (MEMS) switching apparatus |
November 2, 2004 |
| This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a di |
