| Patent Number |
Title Of Patent |
Date Issued |
| 6830877 |
Method for forming via and contact holes with deep UV photoresist |
December 14, 2004 |
| A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with U |
| 6764810 |
Method for dual-damascene formation using a via plug |
July 20, 2004 |
| A method for improving a photolithographic patterning process in a dual damascene process including providing at least one via opening in a substrate including a low dielectric constant material; blanket depositing a photo-sensitive resinous layer to fill the at least one via opening; |
| 6652666 |
Wet dip method for photoresist and polymer stripping without buffer treatment step |
November 25, 2003 |
| A wet dip method for photoresist and polymer stripping from a wafer surface without the need for a buffer solvent treatment step is disclosed. In the method, the wafer is first exposed to an etchant solution that is maintained at a temperature of at least 80.degree. C. The wafer is then |
| 6583062 |
Method of improving an aspect ratio while avoiding etch stop |
June 24, 2003 |
| A plasma etching method for improving an aspect ratio including an etching profile including providing a substrate including an oxide containing insulating layer in a multilayer semiconductor device having at least a first underlying etching stop layer and at least a second etching stop |
| 6570257 |
IMD film composition for dual damascene process |
May 27, 2003 |
| The use of an intermetal dielectric (IMD) layer and an organic etch-stop layer are disclosed in forming a dual damascene in order to reduce the RC delay and the overall dielectric constant of the damascene interconnect. The disclosed IMD layer is an FSG and the etch-stop layer is an orga |
| 6316351 |
Inter-metal dielectric film composition for dual damascene process |
November 13, 2001 |
| The use of an intermetal dielectric (IMD) layer and an organic etch-stop layer are disclosed in forming a dual damascene in order to reduce the RC delay and the overall dielectric constant of the damascene interconnect. The disclosed IMD layer is an FSG and the etch-stop layer is an orga |
