| Patent Number |
Title Of Patent |
Date Issued |
| 7405481 |
Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated |
July 29, 2008 |
| In an integrated circuit chip, a conductive line is formed in a first IMD layer. The conductive line is formed of a conductive line material that tends to form an oxide when exposed to an oxygen-containing substance. A glue layer is formed on the conductive line. The glue layer is formed |
| 7312531 |
Semiconductor device and fabrication method thereof |
December 25, 2007 |
| Semiconductor devices and methods for fabricating the same. The devices include a substrate, a catalyst layer, a second dielectric layer, and carbon nanotubes (CNTs). The substrate comprises an overlying first dielectric layer with an electrode embedded therein. The catalyst layer ov |
| 7259090 |
Copper damascene integration scheme for improved barrier layers |
August 21, 2007 |
| A metal filled dual damascene structure with a reduced capacitance contribution and method for forming the same, the method including forming a first metal filled damascene lined with a first metal barrier layer thickness in a first dielectric insulating layer; and, forming a second |
| 7256124 |
Method of fabricating semiconductor device |
August 14, 2007 |
| A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to an |
| 7253524 |
Copper interconnects |
August 7, 2007 |
| A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch stop layer has a di |
| 7250364 |
Semiconductor devices with composite etch stop layers and methods of fabrication thereof |
July 31, 2007 |
| Semiconductor devices with composite etch stop layers and methods of fabrication thereof. An semiconductor device with a composite etch stop layer includes a substrate having a conductive member, a first etch stop layer on the substrate and the conductive member, a second etch stop l |
| 7247571 |
Method for planarizing semiconductor structures |
July 24, 2007 |
| A method for planarizing a semiconductor structure is disclosed. A semiconductor substrate having a first area in which one or more trenches are formed in a first pattern density, and a second area in which one or more trenches are formed in a second pattern density lower than the first |
| 7244673 |
Integration film scheme for copper / low-k interconnect |
July 17, 2007 |
| A structure for a multi-level interconnect inter-level dielectric layer (ILD), a method of manufacturing thereof, and a semiconductor device including the ILD layer. The ILD layer includes a first low-dielectric constant material sub-layer, and a second low-dielectric constant materi |
| 7220677 |
WAT process to avoid wiring defects |
May 22, 2007 |
| A method for forming a multi-level semiconductor device to eliminate conductive interconnect protrusions following a WAT test, the method including forming a first metallization layer; carrying out a wafer acceptance testing (WAT) process; and, then carrying out a chemical mechanical |
| 7217648 |
Post-ESL porogen burn-out for copper ELK integration |
May 15, 2007 |
| A method of manufacturing a semiconductor device having a porous, low-k dielectric layer is provided. A preferred embodiment comprises the steps of forming a porogen-containing, low-k dielectric layer, in the damascene process. In preferred embodiments, pore generation, by e-beam porogen |
| 7160821 |
Method of depositing low k films |
January 9, 2007 |
| A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to |
| 7129164 |
Method for forming a multi-layer low-K dual damascene |
October 31, 2006 |
| A damascene structure and method for forming the same in a multi-density dielectric insulating layer the method including providing a substrate; forming at least a first layer comprising silicon oxide according to a first process having a first density; forming at least a second layer |
| 7094683 |
Dual damascene method for ultra low K dielectrics |
August 22, 2006 |
| A method for forming a dual damascene opening to protect a low-K dielectric insulating layer including providing a semiconductor process wafer comprising a via opening extending though a thickness portion of at least one dielectric insulating layer; depositing a first dielectric laye |
| 7074727 |
Process for improving dielectric properties in low-k organosilicate dielectric material |
July 11, 2006 |
| Low-k organosilicate dielectric material can be exposed to a series of reagents, including a halogenation reagent, an alkylation reagent, and a termination reagent, in order to reverse degradation of dielectric properties caused by previous processing steps. |
| 7074708 |
Method of decreasing the k value in sioc layer deposited by chemical vapor deposition |
July 11, 2006 |
| A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about |
| 7071093 |
Integrated treatment method for obtaining robust low dielectric constant materials |
July 4, 2006 |
| An integrated method comprises providing a low dielectric material, applying a first treatment altering a first property of the low dielectric material, and applying a second treatment altering a second property of the treated low dielectric material and producing a lower dielectric |
| 7056826 |
Method of forming copper interconnects |
June 6, 2006 |
| A method of forming copper interconnects for an integrated circuit is provided. An antireflective coating layer is formed over an insulating layer formed over a semiconductor substrate. An interconnect pattern is patterned and etched into said insulating layer. A diffusion barrier la |
| 6958524 |
Insulating layer having graded densification |
October 25, 2005 |
| A method of manufacturing an insulating layer, including forming a first dielectric layer having a first pore size over a substrate, shrinking the first pore size to a second pore size by a first densification process, forming a second dielectric layer over the first dielectric layer, an |
| 6930061 |
Plasma processes for depositing low dielectric constant films |
August 16, 2005 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can |
| 6869896 |
Plasma processes for depositing low dielectric constant films |
March 22, 2005 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferabl |
| 6806207 |
Method of depositing low K films |
October 19, 2004 |
| A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to th |
| 6784119 |
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition |
August 31, 2004 |
| A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than abou |
| 6756321 |
Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced di |
June 29, 2004 |
| A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing |
| 6753607 |
Structure for improving interlevel conductor connections |
June 22, 2004 |
| The present invention relates to an improved integrated circuit structure including adjacent conductive and dielectric layers having a continuous, planar top surface, produced by a process which includes treating the surface with a silane compound, followed by depositing an etch stop lay |
| 6743737 |
Method of improving moisture resistance of low dielectric constant films |
June 1, 2004 |
| A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to |
| 6734115 |
Plasma processes for depositing low dielectric constant films |
May 11, 2004 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferabl |
| 6660656 |
Plasma processes for depositing low dielectric constant films |
December 9, 2003 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be |
| 6632735 |
Method of depositing low dielectric constant carbon doped silicon oxide |
October 14, 2003 |
| A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated |
| 6627532 |
Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
September 30, 2003 |
| A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than abou |
| 6602780 |
Method for protecting sidewalls of etched openings to prevent via poisoning |
August 5, 2003 |
| A method for forming a protective oxide liner to reduce a surface reflectance including providing a hydrophilic insulating layer over a conductive layer; providing an anti-reflectance coating (ARC) layer over the hydrophilic insulating layer; providing an etching stop layer over the |
| 6602779 |
Method for forming low dielectric constant damascene structure while employing carbon doped sili |
August 5, 2003 |
| Within a damascene method for forming a patterned conductor layer having formed interposed between its patterns a dielectric layer formed of a comparatively low dielectric constant dielectric material method, there is employed a hard mask layer formed upon the dielectric layer. The hard |
| 6596655 |
Plasma processes for depositing low dielectric constant films |
July 22, 2003 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be |
| 6593247 |
Method of depositing low k films using an oxidizing plasma |
July 15, 2003 |
| A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing c |
| 6562690 |
Plasma processes for depositing low dielectric constant films |
May 13, 2003 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be |
| 6541282 |
Plasma processes for depositing low dielectric constant films |
April 1, 2003 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can |
| 6448187 |
Method of improving moisture resistance of low dielectric constant films |
September 10, 2002 |
| A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to |
| 6348725 |
Plasma processes for depositing low dielectric constant films |
February 19, 2002 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can |
| 6303523 |
Plasma processes for depositing low dielectric constant films |
October 16, 2001 |
| A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can |
| 6245690 |
Method of improving moisture resistance of low dielectric constant films |
June 12, 2001 |
| A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to |
