| Patent Number |
Title Of Patent |
Date Issued |
| 7385287 |
Preventing damage to low-k materials during resist stripping |
June 10, 2008 |
| A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is pre |
| 7371332 |
Uniform etch system |
May 13, 2008 |
| Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone s |
| 7294580 |
Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition |
November 13, 2007 |
| A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping proc |
| 7244336 |
Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
July 17, 2007 |
| A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be atta |
| 7226852 |
Preventing damage to low-k materials during resist stripping |
June 5, 2007 |
| A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is pre |
| 7211518 |
Waferless automatic cleaning after barrier removal |
May 1, 2007 |
| A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber whe |
| 7169231 |
Gas distribution system with tuning gas |
January 30, 2007 |
| An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality |
| 7041230 |
Method for selectively etching organosilicate glass with respect to a doped silicon carbide |
May 9, 2006 |
| A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in the organosilicate g |
| 6949460 |
Line edge roughness reduction for trench etch |
September 27, 2005 |
| A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the |
| 6841943 |
Plasma processor with electrode simultaneously responsive to plural frequencies |
January 11, 2005 |
| A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substant |
| 6822185 |
Temperature controlled dome-coil system for high power inductively coupled plasma systems |
November 23, 2004 |
| The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting |
| 6744212 |
Plasma processing apparatus and method for confining an RF plasma under very high gas flow and R |
June 1, 2004 |
| The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode, a power generator, a second electrode, at least one confinement ring, and a ground extension surrounding the first |
| 6712020 |
Toroidal plasma source for plasma processing |
March 30, 2004 |
| A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the i |
| 6581612 |
Chamber cleaning with fluorides of iodine |
June 24, 2003 |
| A method of cleaning a semiconductor processing chamber uses as a cleaning gas precursor an iodine fluoride such as IF.sub.5 and IF.sub.7. Reactive species are generated from the precursor with help of plasma. These reactive species are further used to clean the processing chamber. |
| 6475335 |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
November 5, 2002 |
| An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber th |
| 6471822 |
Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
October 29, 2002 |
| The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each |
| 6418874 |
Toroidal plasma source for plasma processing |
July 16, 2002 |
| A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the i |
| 6352049 |
Plasma assisted processing chamber with separate control of species density |
March 5, 2002 |
| The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral cha |
| 6270687 |
RF plasma method |
August 7, 2001 |
| An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the ch |
| 6270617 |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
August 7, 2001 |
| An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber th |
| 6247425 |
Method and apparatus for improving processing and reducing charge damage in an inductively coupl |
June 19, 2001 |
| The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular |
| 6085688 |
Method and apparatus for improving processing and reducing charge damage in an inductively coupl |
July 11, 2000 |
| The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular |
| 6071372 |
RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber |
June 6, 2000 |
| An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the ch |
| 5817534 |
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers |
October 6, 1998 |
| The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing |
| 5801386 |
Apparatus for measuring plasma characteristics within a semiconductor wafer processing system an |
September 1, 1998 |
| Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper |
| 5753044 |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
May 19, 1998 |
| An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and |
| 5565681 |
Ion energy analyzer with an electrically controlled geometric filter |
October 15, 1996 |
| An ion energy analyzer having a micro-channel plate where the geometric filtering characteristics of the micro-channel plate are electrically controlled. The ion energy analyzer contains a metallic collector, a control grid and a micro-channel plate, all formed into a cylindrical sta |
