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Yung-Chi Lee Patents
Inventor:
Lee; Yung-Chi
Address:
Kaohsiung, TW
No. of patents:
20
Patents:




Patent Number Title Of Patent Date Issued
7064428 Wafer-level package structure June 20, 2006
A wafer-level package structure, applicable to a flip-chip arrangement on a carrier, which comprises a plurality of contact points, is described. This wafer-level package structure is mainly formed with a chip and a conductive layer. The conductive layer is arranged on the bonding pads o
6989326 Bump manufacturing method January 24, 2006
A method of forming bumps on the active surface of a silicon wafer. A first under-bump metallic layer is formed over the active surface of the wafer. A second under-bump metallic layer is formed over the first under-bump metallic layer. A portion of the second under-bump metallic lay
6967153 Bump fabrication process November 22, 2005
A bump fabrication process for forming a bump over a wafer having a plurality of bonding pads thereon is provided. A patterned solder mask layer having a plurality of openings that exposes the respective bonding pads is formed over a wafer. The area of the opening in a the cross-sect
6927964 Structure for preventing burnt fuse pad from further electrical connection August 9, 2005
A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device
6877653 Method of modifying tin to lead ratio in tin-lead bump April 12, 2005
A method of modifying the tin to lead ratio of a tin-lead bump forms a patterned solder mask over a substrate that comprises a first tin-lead bump formed thereon, the patterned solder mask having an opening that exposes the tin-lead bump. A solder material including tin and lead is f
6875683 Method of forming bump April 5, 2005
A method of forming a bump on an active surface of a wafer is disclosed. The method of the invention forms an under ball metallurgy (UBM) onto the active surface of the wafer. Then, the UBM is partially removed until a portion of the active surface of the wafer is exposed. At least one
6861346 Solder ball fabricating process March 1, 2005
A solder ball fabricating process for forming solder balls over a wafer having an active layer is provided. A patterned solder mask layer is formed over the active surface of the wafer. The patterned solder mask layer has an opening that exposes a bonding pad on the wafer. Solder mat
6846719 Process for fabricating wafer bumps January 25, 2005
A wafer bump fabrication process is provided in the present invention. A wafer with multiple bonding pads and a passivation layer, which exposes the bonding pads, is provided. The surface of each bonding pad has an under bump metallurgy layer. A patterned photoresist layer with a plu
6828664 Packaging substrate with electrostatic discharge protection December 7, 2004
The present invention relates to a packaging substrate with electrostatic discharge protection. The packaging substrate is disposed in a recess of a mold and comprises an outer wall electrically connecting an inner wall of the recess. A first copper-mesh layer and a second copper-mesh la
6827252 Bump manufacturing method December 7, 2004
A method of forming bumps on the active surface of a silicon wafer. An under-ball metallic layer is formed over the active surface of the wafer. A plurality of first solder blocks is attached to the upper surface of the under-ball metallic layer. Each first solder block has an upper surf
6756256 Method for preventing burnt fuse pad from further electrical connection June 29, 2004
A method for preventing burnt fuse pads from further electrical connection suitable before the formation of bumps on the wafer. A dielectric layer is formed over the active surface of the wafer covering the bump pads and the fuse pads of the wafer, wherein a central region of the fuse pa
6743707 Bump fabrication process June 1, 2004
The present invention provides a bump fabrication process. A wafer is provided with a patterned photoresist layer formed on the wafer. The patterned photoresist layer has a plurality of openings, corresponding to bonding pads. A conductive layer is formed on the photoresist layer and
6732912 Solder ball attaching process May 11, 2004
A solder ball attaching process for attaching solder balls to a wafer is provided. First, an under-ball-metallurgy layer is formed on the active surface of the wafer. Patterned masking layers are sequentially formed over the active surface of the wafer. The masking layers together form a
6723630 Solder ball fabrication process April 20, 2004
A solder ball fabrication process for forming solder balls over a wafer having an active layer is provided. A plurality of patterned solder mask layers is sequentially formed over the active surface of the wafer. Each patterned solder mask layer has at least an opening that exposes a sol
6720244 Bump fabrication method April 13, 2004
A bump fabrication method is described. The method comprises the steps of providing a wafer having an active surface and a plurality of bonding pads formed on the active surface; respectively forming an under bump metallurgy layer onto the bonding pads, wherein the under bump metallurgy
6716739 Bump manufacturing method April 6, 2004
A method of forming bumps on the active surface of a silicon wafer. A first under-ball metallic layer is formed over the active surface of the wafer. A second under-ball metallic layer is formed over the first under-ball metallic layer. A portion of the second under-ball metallic layer i
6713320 Bumping process March 30, 2004
A bumping process wherein a substrate is first provided with many electrical connections. Subsequently, the bumps on the bump transfer substrate are pressed onto the electrical connections of the substrate accompanying a heating process and then the bumps are transferred onto the ele
6692581 Solder paste for fabricating bump February 17, 2004
A solder paste for fabricating bumps includes a flux and metallic alloy powder. The metallic alloy powder includes a plurality of low eutectic metallic alloy granules, and the size of these metallic alloy granules is 20-60 .mu.m and the average size of the metallic granules is 35 .mu.m t
6673711 Solder ball fabricating process January 6, 2004
A solder ball fabricating process for forming solder balls over a wafer having an active layer is provided. A patterned solder mask layer is formed over the active surface of the wafer. The patterned solder mask layer has an opening that exposes a bonding pad on the wafer. Solder mat
6617237 Lead-free bump fabrication process September 9, 2003
A lead-free solder bump fabrication process for producing a plurality of lead-free solder bumps over a wafer is provided. The lead-free solder bump fabrication process includes forming a lead-free pre-formed solder bump over each bonding pad on the wafer and then forming a patterned sold


 
 
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