| Patent Number |
Title Of Patent |
Date Issued |
| 7262103 |
Method for forming a salicide in semiconductor device |
August 28, 2007 |
| Disclosed is a method for forming salicide in a semiconductor device. The method comprises the steps of: forming a first and a second gate oxide film and in a non-salicide region and a salicide region, the first gate oxide film being thicker than the second gate oxide film; forming a |
| 7148150 |
Method of forming metal line layer in semiconductor device |
December 12, 2006 |
| The present invention relates to a method of forming a metal line layer in a semiconductor device comprising step of depositing a metal line layer on a semiconductor structure; forming an insulating film and a photoresist material on the metal line layer in a sequential manner, patte |
| 7078339 |
Method of forming metal line layer in semiconductor device |
July 18, 2006 |
| The present invention is provided to form a metal line layer in a semiconductor device, wherein at least one conductive layer of a plurality of conductive layers is etched, a side wall oxide film is formed on side walls of some conductive layers of the etched conductive layers, and t |
| 7030507 |
Test pattern of semiconductor device |
April 18, 2006 |
| Disclosed is a test pattern comprising: lower metal patterns for test formed in such a manner that crank-type patterns are arranged in sequence overlapping on each other in a view along a vertical line; hole patterns formed in such a manner that each of the hole patterns exposes either a |
| 7018927 |
Method for forming isolation film for semiconductor devices |
March 28, 2006 |
| An isolation film for semiconductor devices is formed from a pad oxide film and a pad nitride film on a substrate, etching the pad nitride film, the pad oxide film and the substrate to form a trench in an active region of the substrate; forming a sidewall oxide film on the surface of the |
| 6927142 |
Method for fabricating capacitor in semiconductor device |
August 9, 2005 |
| Disclosed is a method of fabricating a capacitor of a semiconductor device, which can produce an MIM capacitor in which an insulator film is formed to have a positive slope by means of a polymer, thereby preventing leakage of current in the capacitor. The method comprises the steps of: s |
| 6746936 |
Method for forming isolation film for semiconductor devices |
June 8, 2004 |
| The present invention relates to a method for forming an isolation film for semiconductor devices. This method comprises the steps of: successively forming a first oxide film and a nitride film on a semiconductor substrate; patterning the nitride film and the first oxide film to expose |
