| Patent Number |
Title Of Patent |
Date Issued |
| 5366934 |
Method for sulfide surface passivation |
November 22, 1994 |
| A purely chemical method for forming a layer of insoluble sulfides on semiconductor surfaces in order to passivate their surfaces and more particularly to a method of forming a layer of insoluble sulfides on a HgCdTe device surface. |
| 4828648 |
Liquid phase epitaxy apparatus and method |
May 9, 1989 |
| An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the |
| 4755364 |
Liquid phase epitaxy apparatus and method |
July 5, 1988 |
| An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the |
| 4103144 |
Low inductance heater configuration for solid state devices and microcircuit substrates |
July 25, 1978 |
| A low inductance, rapid response, heater for silicon photodetector and microcircuit applications is realized by depositing on a substrate surface a heater whose contact terminals and resistance element are configured to eliminate electrical noise due to the induced currents that commonly |
| 4086375 |
Batch process providing beam leads for microelectronic devices having metallized contact pads |
April 25, 1978 |
| A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition |
