| Patent Number |
Title Of Patent |
Date Issued |
| 7312485 |
CMOS fabrication process utilizing special transistor orientation |
December 25, 2007 |
| Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> directio |
| 6627506 |
Thin tensile layers in shallow trench isolation and method of making same |
September 30, 2003 |
| The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a |
| 6368931 |
Thin tensile layers in shallow trench isolation and method of making same |
April 9, 2002 |
| The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a |
| 4617669 |
Method and apparatus for pumping lasant slabs |
October 14, 1986 |
| In a slab laser, the optical pumping lamps extend transversely to the mean direction of the laser beam with the spatial period of the lamps being harmonically related to the spatial period of the zig-zag laser beam path within the slab, preferably with equal periods. In addition, the lam |
| 4563763 |
Method and apparatus for cooling a slab laser |
January 7, 1986 |
| In a high average power slab laser, heat generated in the laser slab is conducted through a thin layer of thermally conductive gas, such as hydrogen, helium or air, and then through an optically transparent window into a flow of liquid coolant. In a preferred embodiment, a second flow of |
