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Sang Hyun Kim Patents
Inventor:
Kim; Sang Hyun
Address:
Daegu-shi, KR
No. of patents:
27
Patents:




Patent Number Title Of Patent Date Issued
7379136 Transflective type liquid crystal display device and method for fabricating the same May 27, 2008
A CMOS-TFT array substrate and a method for fabricating the same is disclosed, by a low-mask technology to decrease the usage count of masks, which includes a substrate comprising an active area having a plurality of pixel regions and a driving circuit area for driving the active area,
7362389 Liquid crystal display device and fabrication method thereof April 22, 2008
An LCD device and a fabrication method having a reduced number of masks and simplified fabrication processes. The method includes providing a substrate, forming an active pattern on the substrate, forming a first insulating layer on the substrate, forming a gate electrode and a pixel
7342631 Liquid crystal display device and method of fabricating the same March 11, 2008
A method of fabricating a liquid crystal display device includes forming a data bus line on a substrate, forming a preliminary interlayer insulating layer having a first thickness on the substrate including the data bus line, forming an interlayer insulating layer by etching the prelimin
7316248 Apparatus and method of dispensing liquid crystal January 8, 2008
A liquid crystal dispensing apparatus includes a container containing liquid crystal material; a discharge pump drawing in and discharging the liquid crystal material; a nozzle dispensing, onto a substrate, liquid crystal material discharged by the discharge pump; and a detector arra
7298431 Liquid crystal display device and fabricating method thereof November 20, 2007
A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in
7273077 Apparatus and method of dispensing liquid crystal September 25, 2007
An apparatus for dispensing liquid crystal material including a container containing liquid crystal material, a discharge pump drawing-in liquid crystal material and discharging the drawn liquid crystal material, a nozzle dispensing the discharged liquid crystal material onto LCD panel
7271904 Seal dispenser for fabricating liquid crystal display panel and method for detecting discontinuo September 18, 2007
A seal dispenser for fabricating a liquid crystal display panel and a method for detecting a discontinuous portion of a seal pattern using the same are disclosed in the present invention. The seal dispenser for fabricating a liquid crystal display panel includes a table holding a sub
7259103 Fabrication method of polycrystalline silicon TFT August 21, 2007
A method of fabricating polycrystalline silicon thin film transistor according to the present invention includes: depositing a buffer layer on a substrate; depositing an amorphous silicon layer on the buffer layer with a predetermined thickness; crystallizing the deposited amorphous
7250331 Mask for crystallizing and method of crystallizing amorphous silicon using the same July 31, 2007
A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of setting the mask over
7215405 Dispenser system for liquid crystal display panel and method of using the same May 8, 2007
A dispenser system for a liquid crystal display panel includes a table to overturn a substrate having at least one image display part on a first surface of the overturned substrate, and at least one syringe system to supply sealant onto a first surface of the overturned substrate to form
7215387 Liquid crystal display device and method of fabricating the same May 8, 2007
A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer ab
7206035 Method of fabricating liquid crystal display device April 17, 2007
A method of fabricating a liquid crystal display device includes forming a first active layer on a substrate, forming a first gate insulating film on the first active layer, forming a first gate electrode on the first gate insulating film, forming a first interlayer insulating layer on t
7184107 Liquid crystal display device and method of fabricating the same February 27, 2007
A method of fabricating a liquid crystal display device includes forming an active pattern on a substrate, forming a first insulating layer on the substrate over the active pattern, forming a gate line including a gate electrode and a data line on the substrate, the data line including a
7153762 Method of fabricating polycrystalline silicon thin film for improving crystallization characteri December 26, 2006
A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer to a second thickne
7126953 Apparatus for transfer of voice traffic in VoDSL gateway October 24, 2006
An apparatus and method for the transfer of voice traffic in a Voice over Digital Subscriber Line (VoDSL) gateway are disclosed, which are capable of transferring the voice traffic without use of a central processing unit (CPU). The gateway provides an interface between an asynchronous
7119865 Transflective-type liquid crystal display device including projection seed pattern along same la October 10, 2006
A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semicondu
6988991 Three-dimensional ultrasound imaging method and apparatus using lateral distance correlation fun January 24, 2006
Disclosed is a three-dimensional ultrasound image method and apparatus for reducing distortions of ultrasound images by precisely estimating a distance between consecutive two-dimensional frames obtained by a manual scanning. The apparatus comprises a transducer array for transmitting
6875547 Mask for crystallizing amorphous April 5, 2005
A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of setting the mask over
6745436 Hinge apparatus for a portable radiophone having a multi-angled hinge cam June 8, 2004
A hinge apparatus capable of making a folder of a portable communications terminal to stop in any desired angular positions in accordance with an eye level of its user. The hinge apparatus includes a main body having a pair of hinge arms on opposite sides of its opposed end, a folder hav
6571018 Encoding and/or decoding system for three-dimensional color ultrasonic image May 27, 2003
A three-dimensional color ultrasonic encoding and/or decoding system is provided in which a three-dimensional color ultrasonic image is classified into zero pixel data, gray pixel data and indexed color pixel data, to thereby perform encoding and decoding based on the classification data
6494837 System and method for three-dimensional ultrasound imaging using a steerable probe December 17, 2002
A system and a method generate a 3-D image by fast computing the distance between adjacent 2-D images. The method comprises the steps of: producing a first main frame, a second main frame parallel to the first main frame, and a supplementary frame inclined at an angle with respect to the
6488627 Ultrasonic image searching apparatus and ultrasonic image transmission and reception system adop December 3, 2002
An ultrasonic image searching apparatus is provided, which includes an input unit for inputting a key word for selecting an object to be searched and an ultrasonic image, a feature extraction unit for extracting the feature of the ultrasonic image inputted via the input unit, a storage
6339004 Method of forming shallow trench isolation for preventing torn oxide January 15, 2002
A method of forming a trench for semiconductor device isolation includes the steps of making a trench at a device isolation area of a silicon wafer by etching the silicon wafer and within through a mask pattern, forming a liner oxide on the silicon wafer with the trench through thermal
6326252 Method for fabricating MOS transistor having dual gate December 4, 2001
Methods of forming a MOS transistor having dual gates minimizes impurity channeling and diffusion that can occur during impurity injection and activating processes. A method of fabricating the transistor includes the steps of forming a first conduction type well and a second conduction t
6297091 Method for fabricating contact pad for semiconductor device October 2, 2001
A method for fabricating a contact pad for a semiconductor device, including the steps of forming device isolation layers in a semiconductor substrate to define active regions, forming a plurality of wordlines crossing the active regions, forming an insulating layer on an entire surf
6149728 Semiconductor manufacturing device November 21, 2000
A semiconductor manufacturing device uniformly grows a film on the surface of a wafer and reduces a turnaround time by shortening the time per process unit. The device includes a chamber, a plurality of lamps disposed on the upper end of the chamber to heat the wafer, and a plurality of
6037205 Method of forming capacitor for semiconductor device using N.sub.2 O gas March 14, 2000
A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer


 
 
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