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Sang Deok Kim Patents
Inventor:
Kim; Sang Deok
Address:
Seoul, KR
No. of patents:
6
Patents:




Patent Number Title Of Patent Date Issued
7411299 Passivation film of semiconductor device August 12, 2008
Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first
7393621 Toner composition for electrophotography image forming apparatus July 1, 2008
A toner composition for an electrophotography image forming apparatus includes toner particles and external additives. The toner particles include a colorant, a charge control agent and a release agent with binder resins. The external additives include a first silica having an opposi
7393620 Toner composition July 1, 2008
A toner composition includes toner particles containing a colorant, a binder, a charge control agent, a releasing agent, and an external additive containing silica, silicon carbide, magnesium stearate, and polyvinylidene fluoride. The toner composition of the present invention has a
7282420 Method of manufacturing a flash memory device October 16, 2007
A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming source/drain regions. After completing the source/drain regions, spacers are formed on sidewa
7229912 Method for forming passivation film of semiconductor device and structure of passivation film of June 12, 2007
Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first
7179735 Method of manufacturing semiconductor device February 20, 2007
Provided is a method of manufacturing a semiconductor device. According to the present invention, it is possible that an interlayer insulating film is planarized by forming the interlayer insulating film using multiple simultaneous deposition-and-etch processes without carrying out a


 
 
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