| Patent Number |
Title Of Patent |
Date Issued |
| 7323407 |
Method of fabricating dual damascene interconnections of microelectronic device using diffusion |
January 29, 2008 |
| Methods of fabricating dual damascene interconnections suitable for use in microelectronic devices and similar applications using a diffusion barrier layer to protect against base materials during processing are provided. The methods include the steps of: filling a via with a hydrogen |
| 7307014 |
Method of forming a via contact structure using a dual damascene process |
December 11, 2007 |
| A method of forming a via contact structure using a dual damascene process is disclosed. According to one embodiment a sacrificial layer is formed on an insulating interlayer during the formation of a preliminary via hole. The sacrificial layer has the same composition as a layer filling |
| 7192864 |
Method of forming interconnection lines for semiconductor device |
March 20, 2007 |
| The present invention discloses a method of fabricating interconnection lines for a semiconductor device. The method includes forming an interlayer insulating layer on a semiconductor substrate. A via hole is formed through the interlayer insulating layer. A via filling material is f |
| 7183195 |
Method of fabricating dual damascene interconnections of microelectronic device using hybrid low |
February 27, 2007 |
| A method of fabricating dual damascene interconnections is provided. A dual damascene region is formed in a hybrid dielectric layer having a dielectric constant of 3.3 or less, and a carbon-free inorganic material is used as a via filler. The present invention improves electrical pro |
| 7064059 |
Method of forming dual damascene metal interconnection employing sacrificial metal oxide layer |
June 20, 2006 |
| There is provided a method of forming a dual damascene metal interconnection by employing a sacrificial metal oxide layer. The method includes preparing a semiconductor substrate. An interlayer insulating layer is formed on the semiconductor substrate, and a preliminary via hole is f |
| 7041592 |
Method for forming a metal interconnection layer of a semiconductor device using a modified dual |
May 9, 2006 |
| A method for forming a metal interconnection layer of a semiconductor device comprises forming a film including a material selective to a medium used in an ashing process on an interlayer insulating film. The method comprises transforming the film during the ashing process to form an |
| 7022600 |
Method of forming dual damascene interconnection using low-k dielectric material |
April 4, 2006 |
| In order to avoid a faulty pattern resulting from a photoresist tail being formed due to a step difference of an upper hard mask layer when a dual hard mask layer is used, a planarization layer is formed following patterning of the upper hard mask layer. In this manner, a photoresist |
| 6936533 |
Method of fabricating semiconductor devices having low dielectric interlayer insulation layer |
August 30, 2005 |
| A method of fabricating a semiconductor device having a low dielectric constant is disclosed. According to the method, a silicon oxycarbide layer is formed, treated with plasma, and patterned. The silicon oxycarbide layer is formed by a coating method or a CVD method such as a PECVD |
| 6861347 |
Method for forming metal wiring layer of semiconductor device |
March 1, 2005 |
| A method for forming a metal wiring layer in a semiconductor device using a dual damascene process is provided. A stopper layer, an interlayer insulating layer, and a hard mask layer are sequentially formed on a semiconductor substrate having a conductive layer. A first photoresist p |
| 6858727 |
Intermediate of carbapenem antibiotics and process for the preparation thereof |
February 22, 2005 |
| There is disclosed an azetidinone compound of the formula (I): ##STR1##wherein R is hydrogen, or a hydroxy protecting group, R.sub.1 and R.sub.2 are each independently alkyl of 1-15 carbon atoms, benzyl or cyclized together with the carbon atom to which they are attached to form a 5 or |
| 6855629 |
Method for forming a dual damascene wiring pattern in a semiconductor device |
February 15, 2005 |
| In a method for forming a dual damascene wiring pattern, an etch stop film and an interlayer dielectric film comprising an SiOC:H group material are formed on a substrate having an electrical connection layer formed thereon. An anti-reflection layer is formed on the interlayer dielectric |
| 6849536 |
Inter-metal dielectric patterns and method of forming the same |
February 1, 2005 |
| Provided are an inter-metal dielectric pattern and a method of forming the same. The pattern includes a lower interconnection disposed on a semiconductor substrate, a lower dielectric layer having a via hole exposing the lower interconnection and covering the semiconductor substrate |
| 6828229 |
Method of manufacturing interconnection line in semiconductor device |
December 7, 2004 |
| A method of forming an interconnection line in a semiconductor device is provided. A first etching stopper is formed on a lower conductive layer which is formed on a semiconductor substrate. A first interlayer insulating layer is formed on the first etching stopper. A second etching |
| 6815331 |
Method for forming metal wiring layer of semiconductor device |
November 9, 2004 |
| Methods for forming a metal wiring layer in a semiconductor device using a dual damascene process. In one aspect, a method for forming metal wiring in a semiconductor device comprises: forming a stopper layer on a semiconductor substrate that has a conductive layer formed thereon; fo |
| 6432843 |
Methods of manufacturing integrated circuit devices in which a spin on glass insulation layer is |
August 13, 2002 |
| An integrated circuit device is manufactured by forming a pattern on a substrate. The pattern may include two or more mesa regions. The pattern and the substrate are coated with a spin on glass layer and then the spin on glass layer is dissolved so that the spin on glass layer is recesse |
| 5869477 |
.beta.-methylcarbapenem derivatives, process for the preparation thereof and pharmaceutical comp |
February 9, 1999 |
| A .beta.-methylcarbapenem compound of formula (I), a salt or an ester thereof, a process for the preparation thereof and a anti-bacterial composition containing same: ##STR1## wherein: R.sup.1 is a C.sub.1-6 alkyl, C.sub.2-6 alkenyl, cycloalkyl, aryl or heterocyclic aryl group. |
| 5453793 |
Method for recording a series program in a video cassette recorder |
September 26, 1995 |
| Recording of a weekly serial TV program which is broadcast at least two times or more a week at designated times in a video cassette recorder having a system controller, wherein the system controller is provided with a memory and a timer for expressing a current time, a current day of th |
