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Toshisuke Kashiwagi Patents |
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Inventor: Kashiwagi; Toshisuke
Address: Tokyo, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6174750 |
Process for fabricating a drift-type silicon radiation detector |
January 16, 2001 |
| In a process for fabricating a radiation detector comprising the step of drifting lithium from one side of a silicon wafer, a boron diffusion layer is formed on the other side of the silicon wafer prior to the drifting step. Therefore, in spite of the tendency of the drift layer to have |
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