| Patent Number |
Title Of Patent |
Date Issued |
| 7049154 |
Vapor phase growth method by controlling the heat output in the gas introduction region |
May 23, 2006 |
| A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate (1) while introducing gas into a reaction chamber (11), has a step of performing heating output power control in a gas introduction region (R1) |
| 6890383 |
Method of manufacturing semiconductor wafer and susceptor used therefor |
May 10, 2005 |
| A semiconductor wafer manufacturing method comprising mounting a single crystal silicon wafer (W) in a pocket (11) arranged in a susceptor (10), and performing heat treatment for the single crystal silicon wafer (W) to manufacture a semiconductor wafer, wherein a contact ratio of the poc |
| 6217651 |
Method for correction of thin film growth temperature |
April 17, 2001 |
| In the process of thin film growth, actual temperature of a substrate is measured and corrected with low cost in short time. With first thin film growth equipment of which a difference between set temperature of a heating source and an actual temperature of the substrate (hereinafter, |
| 5685905 |
Method of manufacturing a single crystal thin film |
November 11, 1997 |
| In the preparation stage before the manufacturing of the single crystal thin film 13, growth conditions are determined by conducting a vapor phase growth without rotating the rotatable holder 14 on its axis and making adjustments such that the growth rate of the single crystal thin film |
