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Masakazu Kanechika Patents |
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Inventor: Kanechika; Masakazu
Address: Aichi, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6936484 |
Method of manufacturing semiconductor device and semiconductor device |
August 30, 2005 |
| An impurity precipitation region is formed by introducing an impurity, e.g., oxygen, into a silicon substrate or a silicon layer and thermally treating it, and performing high selectivity anisotropic etching with the precipitation region used as a micro mask. Thus, a cone (conic body or |
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