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Yun Hyuck Ji Patents |
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Inventor: Ji; Yun Hyuck
Address: Kyoungki-do, KR
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7067390 |
Method for forming isolation layer of semiconductor device |
June 27, 2006 |
| Disclosed is a method for forming an isolation layer of a semiconductor device. The method includes the steps of providing a semiconductor substrate having a predetermined isolation region, sequentially forming a pad oxide layer and a pad nitride layer exposing the predetermined isol |
| 6979611 |
Method for fabricating semiconductor device |
December 27, 2005 |
| In a silicon substrate having a contact hole in a device region, the contact resistance between the contact plug and the silicon substrate is reduced by preventing formation of an undesirable layer therebetween by treating the exposed surface of the substrate before forming the contact |
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