| Patent Number |
Title Of Patent |
Date Issued |
| 5266151 |
Inside edge defined, self-filling (IESF) die for crystal growth |
November 30, 1993 |
| A method and system for growing elongated crystalline materials. Crystalline melt rises through a capillary. At the upper end of the capillary is a die having a die tip. A seed crystal engages and draws the melt through the die tip. The die tip is characterized by a top surface and a |
| 4659421 |
System for growth of single crystal materials with extreme uniformity in their structural and el |
April 21, 1987 |
| A system and process for growing extremely high quality single crystal materials, particularly silicon and other semiconductor materials, containing a generally uniform distribution of dopants, impurities, and oxygen, both axially and radially, wherein the concentration of impurities |
| 4599132 |
Guidance system for low angle silicon ribbon growth |
July 8, 1986 |
| In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical pos |
| 4417944 |
Controlled heat sink for crystal ribbon growth |
November 29, 1983 |
| A method and associated apparatus are disclosed for use in forming crystalline ribbons by pulling a ribbon in a generally horizontal direction from a pool of molten crystal-forming materials, such as silicon or the like. A heat sink is located above the surface of the molten material |
| 4289571 |
Method and apparatus for producing crystalline ribbons |
September 15, 1981 |
| A method and associated apparatus are disclosed for the continuous formation of single crystal silicon ribbons. A seed crystal is placed on the surface of a pool of molten silicon and pulled at a slight angle above the horizontal over the edge of a meniscus attachment member at a rate |
| 4265859 |
Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growt |
May 5, 1981 |
| A method and related apparatus are provided for producing on a semi-continuous basis polycrystalline silicon and melt replenishment for a crystal growth crucible. The silicon is deposited in low density form on the inner walls of a multi-walled reaction chamber by delivering gaseous |
| 4248645 |
Method for reducing residual stresses in crystals |
February 3, 1981 |
| A temperature profile controller is provided for cooling a crystal as it is pulled from a melt so that a substantially linear temperature gradient is established and maintained along the length of the crystal as it is cooled, whereby to prevent or reduce the occurrence of residual stress |
| 4158038 |
Method and apparatus for reducing residual stresses in crystals |
June 12, 1979 |
| A temperature profile controller is provided for cooling a crystal as it is pulled from a melt so that a substantially linear temperature gradient is established and maintained along the length of the crystal as it is cooled, whereby to prevent or reduce the occurrence of residual stress |
| 4123989 |
Manufacture of silicon on the inside of a tube |
November 7, 1978 |
| A new method and apparatus for producing silicon are disclosed which are characterized by using a silicon tube as the reaction chamber and disproportionating a gaseous silicon compound so as to produce silicon and deposit the same on the inner surface of the reaction chamber. |
| 4118197 |
Cartridge and furnace for crystal growth |
October 3, 1978 |
| A novel cartridge containing selected crystal growth components is provided for use in a crystal growing system. The cartridge is adapted to be mounted directly to a crystal pulling mechanism and is arranged so that it can be inserted into a furnace containing a supply of molten feed |
