According to embodiments of the invention, a bit line interlayer insulating layer is placed over a semiconductor substrate. Two adjacent bit line patterns are placed in parallel on the bit line interlayer insulating layer and each of the two adjacent bit line patterns includes a bit
According to embodiments of the invention, a bit line interlayer insulating layer is placed over a semiconductor substrate. Two adjacent bit line patterns are placed in parallel on the bit line interlayer insulating layer and each of the two adjacent bit line patterns includes a bit
A method for forming an isolation region of a semiconductor device includes the steps of forming first and second insulating layers on a substrate, removing the second insulating layer over an isolation region, forming an oxide layer by oxidizing the first insulating layer over the isola
