| Patent Number |
Title Of Patent |
Date Issued |
| 7450317 |
Zoom lens |
November 11, 2008 |
| A zoom lens includes a first lens group having a negative refracting power, a second lens group having a positive refracting power and being aligned closer to an image surface than the first lens group, and a third lens group aligned closer to the image surface than the second lens g |
| 7446275 |
Key pad and keypad assembly |
November 4, 2008 |
| A keypad includes a light guide panel, the interior of which light propagates through; at least one key button positioned on the upper surface of the light guide panel; and at least one reflective pattern fixedly positioned with respect to the light guide panel to reflect a part of t |
| 7378606 |
Keypad and keypad assembly |
May 27, 2008 |
| A keypad includes a light guide panel, the interior of which light propagates through, a film positioned on the upper surface of the light guide panel and having at least one key button positioned on the upper surface thereof, and at least one reflective pattern fixedly positioned wi |
| 7335844 |
Keypad assembly for electronic device |
February 26, 2008 |
| A keypad assembly for an electronic device is disclosed. The keypad assembly includes a light guide plate through which a light moves, a plurality of first key buttons on the top surface of the light guide plate, a plurality of reflecting patterns on the bottom surface of the light g |
| 7294803 |
Key pad and keypad assembly |
November 13, 2007 |
| A keypad includes a light guide panel, the interior of which light propagates through; at least one key button positioned on the upper surface of the light guide panel; and at least one reflective pattern fixedly positioned with respect to the light guide panel to reflect a part of t |
| 7245644 |
Semiconductor monolithic integrated optical transmitter |
July 17, 2007 |
| A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first |
| 7244899 |
Keypad assembly for portable terminal |
July 17, 2007 |
| A keypad assembly for a portable terminal according to the present invention includes: a keypad having pad portions with a plurality of key buttons placed thereon, light guide plates disposed between the pad portions, and reflection units disposed on the light guide plates to direct |
| 6798799 |
Wavelength locked integrated optical source structure using multiple microcavity |
September 28, 2004 |
| A wavelength-locked, integrated optical signal source structure using a semiconductor laser device is disclosed. The optical source structure has a semiconductor laser formed on a semiconductor substrate, and an etched portion coupled with an output end of the semiconductor laser. The et |
| 6771681 |
Distributed feedback semiconductor laser |
August 3, 2004 |
| A distributed feedback semiconductor laser and a method of manufacture includes first and second clad layers having predetermined refractive indexes that are formed on a semiconductor substrate. A guide layer propagates light between the first and second clad layers. An oscillating c |
| 6406932 |
Fabrication of high power semiconductor lasers with ridge waveguide structure |
June 18, 2002 |
| A 0.98 .mu.m semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 .mu |
| 6278720 |
High power semiconductor lasers with ridge waveguide structure |
August 21, 2001 |
| A 0.98 .mu.m semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 .mu |
| 6165811 |
Method of fabricating a high power semiconductor laser with self-aligned ion implantation |
December 26, 2000 |
| A method of fabricating a semiconductor laser comprises the steps of sequentially depositing a lower cladding layer, an active layer, a first upper cladding layer, an etching stop layer, a second upper cladding layer and an ohmic contact layer over a compound semiconductor substrate, |
| 6028876 |
High power semiconductor laser device and method for fabricating the same |
February 22, 2000 |
| The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output due to filaments is eliminated. This elimination is achieved by a periodically varying gai |
| 5665612 |
Method for fabricating a planar buried heterostructure laser diode |
September 9, 1997 |
| Disclosed is a method for fabricating a planar buried heterostructure laser diode, comprising the steps of sequentially forming a first clad layer, an undoped active layer and a second clad layer on a substrate so as to complete a first crystal growth; forming a patterned mask layer on t |
| 5504768 |
Semiconductor laser device and method for manufacturing the same |
April 2, 1996 |
| A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic c |
