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Yutaka Ito Patents
Inventor:
Ito; Yutaka
Address:
Tochgi, JP
No. of patents:
107
Patents:


1 2 3


Patent Number Title Of Patent Date Issued
RE40446 Strength-enhancing apparatus for metal part August 5, 2008
Disclosed is a strength-enhancing apparatus for a metal part comprising a recovery mechanism for sucking powder flow dust generated from glass beads crushed on a surface of a gear in a chamber to recover it together with drainage, wherein the recovery mechanism includes a liquid-spouting
RE36751 ATM switching system connectable to I/O links having different transmission rates June 27, 2000
An ATM switching system comprises a switch unit including a plurality of input ports and a plurality of output ports having the same cell transmission rate, and a multiplexer for multiplexing cell trains outputted from at least two output ports into a single cell train and outputting
D372026 Television set July 23, 1996
7373584 Semiconductor memory device and error correction method thereof May 13, 2008
A semiconductor memory device includes a memory array having a data area and a check code area and a refresh control for controlling a refresh operation in a data holding state. The device also includes an operation system for executing an encoding operation for generating the check code
7355919 Semiconductor storage device and refresh control method therefor April 8, 2008
A dynamic semiconductor storage device in which the power supply current during the standby time is diminished to decrease the power consumption and to suppress the chip area from increasing. During the normal operation, the information as to a word line associated with a row address
7346829 Semiconductor device and testing method for same March 18, 2008
A test method for a semiconductor device that is provided with an ECC circuit that uses product code that is composed of a first code and a second code for implementing error correction of a memory, the test method includes steps of: obtaining first pass/fail determination results an
7318183 Data storing method of dynamic RAM and semiconductor memory device January 8, 2008
When a DRAM enters an operation mode in which only a data storing operation is performed, a check bit for error detection and correction for plural data is generated and stored. Refresh operation is performed in a refresh cycle which is made long within an allowable range of an error
7300345 Method and computer-readable medium for deploying characters in a game November 27, 2007
An object of the present invention is to deploy soccer players in optimum positions in a soccer game. As means for achieving this object, a base position and ability parameters of player characters are stored in memory as attribute data. Player character/formation selection means obtain
7260011 Semiconductor storage device and refresh control method therefor August 21, 2007
A dynamic semiconductor storage device in which the power supply current during the standby time is diminished to decrease the power consumption and to suppress the chip area from increasing. During the normal operation, the information as to a word line associated with a row address
7249289 Method of deciding error rate and semiconductor integrated circuit device July 24, 2007
An error rate select circuit activated in an information sustaining mode is provided, wherein a plurality of pieces of data are read from a dynamic memory circuit and inspection bits which are used to detect an error existing in the pieces of data are generated. If no error is detect
7248526 Refresh period generating circuit July 24, 2007
A refresh period generating circuit which generates a refresh period in refreshing a DRAM cell, comprising: an oscillation circuit which oscillates at a frequency with temperature dependence on ambient temperature; a dividing circuit which divides an oscillation output of the oscilla
7225390 Semiconductor memory device provided with error correcting code circuitry May 29, 2007
A semiconductor synchronous dynamic random access memory (SDRAM) device capable of correcting bits having a low error rate in a Pause Refresh Tail distribution and of reducing a data holding current by lengthening a refresh period so that the refresh period exceeds a period for a Pause
7216198 DRAM with super self-refresh and error correction for extended period between refresh operations May 8, 2007
In a semiconductor integrated circuit device, a command decoder is adapted to receive not only an external command but also an internal command. An ECC controller has a command generator and an address generator. When the command decoder decodes an external entry command, the command gen
7184351 Semiconductor memory device February 27, 2007
A semiconductor memory device including an on-chip ECC circuit and having a data retention mode which includes, in the order of state transition, an encoding state EEST by an error correction circuit in which the error correction circuit carries out calculation of parity bits of data of
7167403 Semiconductor storage device and refresh control method therefor January 23, 2007
A dynamic semiconductor storage device in which the power supply current during the standby time is diminished to decrease the power consumption and to suppress the chip area from increasing. During the normal operation, the information as to a word line associated with a row address
7158433 Semiconductor storage device and method of controlling refreshing of semiconductor storage devic January 2, 2007
A semiconductor storage device having a memory cell array in which a plurality of memory cells is provided at intersections of a plurality of bit lines and a plurality of word lines and executing refreshing for holding data, including: memory cells for pairing provided on the memory
7051260 Data storing method of dynamic RAM and semiconductor memory device May 23, 2006
When a DRAM enters an operation mode in which only a data storing operation is performed, a check bit for error detection and correction for plural data is generated and stored. Refresh operation is performed in a refresh cycle which is made long within an allowable range of an error
6992942 Cell leakage monitoring circuit and monitoring method January 31, 2006
A cell leakage monitor includes a circuit for comparing the node voltage of a pseudo-cell equivalent to a memory cell of a DRAM to a reference value to output a refresh signal OSC when the node voltage of the pseudo cell has decreased to a reference value. As the leakage current, the GID
6990031 Semiconductor memory device control method and semiconductor memory device January 24, 2006
In a semiconductor memory device which requires a refresh operation, a control method stops supplying a word line voltage which is a boosted voltage higher than an external supply voltage, a memory array substrate voltage which is a negative voltage supplied to a semiconductor substr
6972585 Semiconductor integrated circuit device and digital measuring instrument December 6, 2005
In a semiconductor integrated circuit device having a DRAM 30, the DRAM 30 has an internal refresh period measuring circuit 20. Supplied with a test mode command as an external command, a command decode portion 32 delivers a test mode signal TM1 to the internal refresh period measuring c
6966630 Inkjet head November 22, 2005
An inkjet recording head characterized by better ink repellency, greater resistance to abrasion and a longer service life than a conventional product can be attained when an ink repellent layer comprising a compound made up of a perfluoropolyether chain and alkoxysilane residue is formed
6949023 Game machine and information storage medium September 27, 2005
The objective of the present invention is to provide a game machine, a musical tone generation device, and an information storage medium that make it possible to synchronize reproduced sounds and images, even if faults such as skips in those sounds or images occur during the reproduc
6934212 Semiconductor apparatus August 23, 2005
A simply structured, and highly reliable semiconductor apparatus having a large storage capacity. The apparatus has a plurality of memory cells on one semiconductor substrate, each including a capacitor having first and second electrodes, and a switching device having a control terminal
6917495 Magnetic disk drive July 12, 2005
A magnetic disk drive having a magnetic disk, a spindle motor for rotating the magnetic disk, a magnetic head slider for recording or reproducing data onto or from the magnetic disk and a housing. A control circuit system is provided for controlling the head slider so that the head slide
6869536 Lubricant, magnetic disk and magnetic disk apparatus March 22, 2005
A lubricant which does not splash easily and has an improved property of slidableness, and a magnetic disk using the lubricant are provided. A magnetic disk apparatus featuring a prolonged service life of a stable operation and an excellent record reproduction property is provided by
6835350 Flat cell and an analyzer using the same December 28, 2004
A measurement cell for analyzer for carrying out qualitative and/or quantitative analysis for one or more substances by an optical means, which is planar and has sample-holding portions, the contact angle between said sample-holding portion and water being 30.degree. or less, and the
6816341 Hard disk drive utilizing second lubricant over a first lubricant having a phosophezine group November 9, 2004
A recording element or a reproducing element in a head generates heat that decomposes lubricating agent adhered to a slider surface near the recording/reproducing element of the head. This decomposed lubricating agent leads to corrosion of the magnetic layer and the like of the magne
6795362 Power controlling method for semiconductor storage device and semiconductor storage device emplo September 21, 2004
A method for controlling power for a semiconductor storage device and the semiconductor storage device are provided which enable power consumption to be greatly reduced in a standby state. The power control method uses an ultra-low power consumption mode in which power control can be exe
6764654 Flat cell and an analyzer using the same July 20, 2004
A measurement cell for analyzer for carrying out qualitative and/or quantitative analysis for one or more substances by an optical means, which is planar and has sample-holding portions, the contact angle between said sample-holding portion and water being 30.degree. or less, and the
6762639 Booster circuit capable of switching between a conventional mode and a low consumption current m July 13, 2004
In a booster circuit comprising a first pump capacitor (CP1) connected between nodes (N1, N3) and a second pump capacitor (CP2) connected between nodes (N2, N4), the booster circuit comprises first through fifth switches (S1-S5). Connected to the node (N1), the first switch (S1) is conne
6735726 Method of deciding error rate and semiconductor integrated circuit device May 11, 2004
There is provided an error rate select circuit activated in an information sustaining mode, wherein data is read out from a memory circuit comprising dynamic memory cells and inspection bits for detection and correction of an error. If no error is detected, a first detection signal is ac
6700826 Semiconductor apparatus March 2, 2004
A simply structured, and highly reliable semiconductor apparatus having a large storage capacity. The apparatus has a plurality of memory cells on one semiconductor substrate, each including a capacitor having first and second electrodes, and a switching device having a control terminal
6697992 Data storing method of dynamic RAM and semiconductor memory device February 24, 2004
When a DRAM enters an operation mode in which only a data storing operation is performed, a check bit for error detection and correction for plural data is generated and stored. Refresh operation is performed in a refresh cycle which is made long within an allowable range of an error occ
6680501 Semiconductor device January 20, 2004
A memory cells are arranged at all intersections of a first word line and one line of a bit-line pair and all intersections of a second word line and the other line of the bit-line pair by arranging in parallel the first word line and the second word line consisting of different layers i
6674112 Semiconductor integrated circuit device January 6, 2004
A semiconductor integrated circuit device has a semiconductor substrate and operates when supplied with appositive supply voltage and a circuit ground potential. The device has word lines, pairs of bit lines, data storage capacitors, and N-channel MOSFETs each having a gate connected to
6668128 Optical fiber wire holder, fusion-splicing apparatus, cleaving apparatus, and optical fiber spli December 23, 2003
An optical fiber holder is provided which can accurately position the tip of an optical fiber during fusion-splice. A holder 2 can be used without removing an optical fiber 1 clamped in a stripping apparatus, cleaving apparatus and fusion-splicing apparatus in common. The optical fiber i
6665147 Magnetic disk drive with supply of perfluoropolyether as lubricant December 16, 2003
A magnetic disk drive having a small decrease in lubricant film thickness on the surface of the magnetic disk and a superior sliding reliability between the magnetic head and the magnetic disk surface. Perfluoropolyether is supplied as the lubricant onto the surface of the magnetic d
6632780 Highly thermal conductive grease composition and cooling device using the same October 14, 2003
There are provided a highly thermal conductive grease composition having both a thermal conductivity and a satisfactory dispense property, and a cooling device applied with same. The grease composition comprises from 70 to 90% by volume of an inorganic powder which is a mixture containin
6584171 X-ray imaging detector and x-ray imaging apparatus June 24, 2003
An X-ray imaging detector for generating X-ray transmission image in a form of electric signal, for use in X-ray imaging apparatus which comprises the X-ray imaging detector, an X-ray generator and a fixing support for fixedly positioning an object to be examined between the X-ray genera
6577530 Semiconductor memory device having memory cells each capable of storing three or more values June 10, 2003
Memory cells are used which each have a MOSFET that holds an information voltage of three or more values at its gate, a writing transistor that supplies the information voltage of three or more values to the gate of the MOSFET, and a reading transistor connected in series with the MOSFET
6555197 Lubricant, magnetic disk and magnetic disk apparatus April 29, 2003
A lubricant which does not splash easily and has an improved property of slidableness, and a magnetic disk using the lubricant are provided. A magnetic disk apparatus featuring a prolonged service life of a stable operation and an excellent record reproduction property is provided by
6543360 Printing plate and printer using it April 8, 2003
A printing system is provided which ensures easy formation of a plate and regeneration of the plate for continued use. The press plate used in a the printing system to form an image using a water-based ink is characterized in that, (I) prior to formation of a latent image, the surface fo
6470783 Installation for dismantling chemical bombs October 29, 2002
The invention provides an installation for dismantling chemical bombs, which can make a toxic chemical agent in a chemical bomb harmless and can dismantle the chemical bomb with safety. The installation for dismantling chemical bombs comprises a container for accommodating the chemical b
6463057 ATM cell switching system October 8, 2002
An ATM switching system comprises a switch unit including a plurality of input ports and a plurality of output ports having the same cell transmission rate, and a multiplexer for multiplexing cell trains outputted from at least two output ports into a single cell train and outputting
6443375 Fuel injection valve coated with anti-fouling perfluoropolyether film layer and associated metho September 3, 2002
A fuel injection valve for a direct gasoline injection engine, a direct injection engine, and an automobile using the same. The fuel injection valve can prevent the deposits produced during combustion of gasoline from accumulating on the surface of the fuel injection valve, or easily rem
6431473 Fuel injection valve coated with anti-fouling perfluoropolyether film layer and associated metho August 13, 2002
The invention provides for a fuel injection valve for a direct gasoline injection engine, a direct injection engine and an automobile using the same, which can prevent the deposits produced during combustion of gasoline from accumulating on the surface of the fuel injection valve, or
6419740 Water-permeable solid material and manufacturing method therefor July 16, 2002
A water-permeable solid material is provided having water-permeable properties together with strength for use as paving materials by effective use of so-called "clinker ash" generated from thermal power plants and the like. In addition, in order to prevent abrasions when pedestrians fall
6396831 ATM cell switching system May 28, 2002
An ATM switching system comprises a switch unit including a plurality of input ports and a plurality of output ports having the same cell transmission rate, and a multiplexer for multiplexing cell trains outputted from at least two output ports into a single cell train and outputting
6339596 ATM cell switching system January 15, 2002
An ATM switching system comprises a switch unit including a plurality of input ports and a plurality of output ports having the same cell transmission rate, and a multiplexer for multiplexing cell trains outputted from at least two output ports into a single cell train and outputting
6330240 ATM cell switching system December 11, 2001
An ATM switching system comprises a switch unit including a plurality of input ports and a plurality of output ports having the same cell transmission rate, and a multiplexer for multiplexing cell trains outputted from at least two output ports into a single cell train and outputting
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