| Patent Number |
Title Of Patent |
Date Issued |
| 6964927 |
Method and production of a sensor |
November 15, 2005 |
| The invention relates to a method for producing a sensor (1), wherein a carrier chip (2) is produced. Said chip is provided with a sensor structure (3) comprising an active sensor surface (4). A material (9) capable of flowing is applied onto carrier chips (2) in such a way that the |
| 6916673 |
Method for producing an optical transmitting and receiving device and a transmitting and receivi |
July 12, 2005 |
| The invention relates to a method for producing an optical transmitting and receiving device (1, 1a) comprising a light emitting transmission element (3, 3a) and a receiving element (4, 4a) which converts this light into an electrical magnitude. The transmission and receiving elements ar |
| 6765394 |
Capacitive magnetic field sensor |
July 20, 2004 |
| The invention relates to a capacitive magnetic field sensor. This sensor has a first electrode (2) and a second electrode (3), which are spaced apart from one another and which form a measurement capacitance. The first electrode (2) is situated on a first substrate body (4), and the seco |
| 6656678 |
Method for examination of a surface layer |
December 2, 2003 |
| In a method for examination of the surface of an object for a topographic and/or a chemical property, the object-surface is impinged with surface-structure selective biocomponents for examination of a topographic property and/or with chemoselective biocomponents for the examination of a |
| 6642126 |
Process for manufacturing a semiconductor wafer with passivation layer mask for etching with mec |
November 4, 2003 |
| A process for manufacturing a semiconductor arrangement (3), whereby in particular a wafer (1) with a large number of semiconductor arrangements forming chips (7) is manufactured, and the wafer is divided afterward, and in this way the semiconductor arrangements are separated. At least o |
| 6638743 |
Method for measuring a state variable |
October 28, 2003 |
| A method is provided for measuring a state variable of a biological cell (3) located in a nutrient medium (2) and supported on and adhering to a support area (5). Within the support area (5) for the cell (3) and at a distance from the support area edge, an opening is made in the membrane |
| 6572748 |
Reference electrode |
June 3, 2003 |
| A reference electrode (1) for electrochemical measurements includes a metallic palladium-containing electrode component (3) which is covered by a layer (4) formed of or containing a palladium compound poorly soluble in aqueous media. Positioned on layer (4) is a reference electrolyte (5) |
| 6475760 |
Method for intracellular manipulation of a biological cell |
November 5, 2002 |
| A process is provided for the intracellular manipulation of a biological cell (3) which is positioned adhering to a support area (5) in a culture medium (2). Inside the support area (5) for the cell (3) an opening into the membrane of the cell (3) is created spaced from its support edge. |
| 6471838 |
Measuring device and process for its manufacture |
October 29, 2002 |
| A measuring device (1), for examining a medium (2) that is liquid or free-flowing, has at least two electrically and/or optically conducting layers or layer areas (5a, 5b, 5c, 6a, 6b, 7a, 7b) located on a substrate layer (3), wherein these layers or layer areas are electrically and/or |
| 6460416 |
Capacitor structure and fabrication process |
October 8, 2002 |
| The invention relates to a capacitor structure with two substrates (1) each having a capacitor electrode (3) deposited on its surface, the substrates (1) being joined together by bump structures located on both sides of the capacitor electrodes (3) such that the capacitor electrodes (3) |
| 6413474 |
Measuring device |
July 2, 2002 |
| A measuring device (1) has a semiconductor arrangement, which includes a semiconductor chip (2) connected to a carrier (4) having at least one through-hole (3). The semiconductor chip (2) has at least one sensor (6) with an active sensor surface (5) facing the through-hole (3). The s |
| 6413440 |
Process for manufacturing a micro-electrode |
July 2, 2002 |
| In a process for manufacturing an electrode (1) on a substrate (2) using a conventional structuring process, an electrically conducting surface structure is created which has at least one tip (3) or edge (4). In the area of the tip (3) or edge (4), an electrode layer (5) is galvanized on |
| 6369435 |
Semiconductor component |
April 9, 2002 |
| A semiconductor component (1) has a pressure sensor and a semiconductor chip (2) with a semiconductor structure (3) for at least one additional function of the semiconductor component (1). The semiconductor chip (2) is connected to a casing (5) by means of an elastic carrier arrangement |
| 6368851 |
Method and apparatus for measuring a state variable |
April 9, 2002 |
| A method is provided for measuring a state variable of a biological cell (3) located in a nutrient medium (2) and supported on and adhering to a support area (5). Within the support area (5) for the cell (3) and at a distance from the support area edge, an opening is made in the membrane |
| 6346675 |
Coupling and method for its manufacture |
February 12, 2002 |
| A coupling (1) has a coupling receiver (2) and a coupling counterpart (3) connectable with it, which in the coupling position is held in a receiver depression (6) of the coupling receiver. The receiver depression (6) is arranged in a layer stack (4) with at least two layers (5a, 5b, 5c, |
| 6294218 |
Process for coating a substrate |
September 25, 2001 |
| In a process for coating a substrate, a texture (4) is created in a portion of its surface. A first layer (5) to be applied on the surface of the substrate adheres better to the texture (4) than it does to a surface area located outside of the texture (4). Then, the layer (5) is applied |
| 6288440 |
Chip arrangement |
September 11, 2001 |
| A chip arrangement (1) has a substrate board (2) with an opening (3), into which a carrier chip (4) is inserted, which has an electrical or electronic structural component (5). At least one conductor path (7) is integrated into the carrier chip (4), which connects the structural comp |
| 6225653 |
Semiconductor components and methods of manufacturing semiconductor components |
May 1, 2001 |
| A semiconductor component (1a) has a highly-doped substrate (4) of a first type of doping into which a highly-doped layer (15) of a second type of doping is introduced in some areas to form a pn Zener junction (16), and a low-doped area (17) of the second type of doping extends from this |
| 6191489 |
Micromechanical layer stack arrangement particularly for flip chip or similar connections |
February 20, 2001 |
| A process is provided for manufacturing a layer arrangement (1) having a bump for a flip chip or similar connection. The layer arrangement has a plurality of layers (2, 3, 4, 5, 6, 7, 11) made of solid material and stacked into a layer stack (8). A recess (10) that extends over several |
| 5976901 |
Process for manufacturing semiconductor devices with active structures |
November 2, 1999 |
| The invention relates to a process for manufacturing semiconductor devices with active device structures which are connected with one another in a wafer, the area of a semiconductor device being determined by process parameters and being substantially greater than the area of an active |
| 5944976 |
Process for forming adjacent moats or holes |
August 31, 1999 |
| A process for forming adjacent moats or holes in an electrically non-insulating substrate wherein an electrically insulating masking layer is deposited on the substrate. To form two adjacent moats or holes, the masking layer has an opening whose width is chosen so that it extends over |
| 5933715 |
Process for manufacturing discrete electronic devices |
August 3, 1999 |
| A process for manufacturing discrete electronic devices with active structures in an SOI (silicon-on-insulator) substrate which is thickened by an epitaxial layer and whose surface has a <100> orientation, said process comprising the steps of: anisotropically etching the first sili |
| 5890807 |
Method for identifying an apparatus or device utilizing a randomly produced characteristic there |
April 6, 1999 |
| A method identifying components is disclosed. Measured values of a randomly produced property of the component are recorded. The measured values are biuniquely assigned to the component by means of a characteristic parameter and the measured values accessibly storing the measured values, |
| 5885897 |
Process for making contact to differently doped regions in a semiconductor device, and semicondu |
March 23, 1999 |
| A process is disclosed for making contact to differently doped regions in a semiconductor device which are disposed in a silicon substrate in different depths, a first region with a first dopant concentration and/or conductivity type and the smaller depth being disposed in a second regio |
| 5858808 |
Process and auxiliary device for fabricating semiconductor devices |
January 12, 1999 |
| An auxiliary device is constituted by a U-bolt-shaped, pincer-like implement which, during the fabrication of semiconductor devices with a mesa structure from a starting substrate forming a wafer, serves to transfer the outline geometry of the individual semiconductor devices from on |
| 5824595 |
Method of separating electronic elements |
October 20, 1998 |
| A method for separating elements associated within a body includes creating a separation region within the body, between the elements, leaving a region of the body which is to be thinned. The method then requires depositing a delay layer on the body, with an opening around the separa |
| 5789307 |
Method of separating electronic devices contained in a carrier |
August 4, 1998 |
| A method of separating electronic devices contained in a carrier which are provided at the surface of the carrier and are covered by a protective layer. Openings are provided above separation regions between adjacent electronic devices. The material of the carrier is removed in the s |
