| Patent Number |
Title Of Patent |
Date Issued |
| 7319823 |
Modulation scheme and transmission system for NRZ signals with left and right side filtering |
January 15, 2008 |
| The invention shows a transmission system with a transmitter function, a transmitting fiber and a receiver function where the transmitter function comprising lightsources (1), modulators (2) and a multiplexer (3), and the receiver comprising at least a demultiplexer (5), filters and |
| 6748134 |
Frequency allocation scheme and transmission system for polarization and wavelength division mul |
June 8, 2004 |
| A frequency allocation scheme for optical channels transmitted via a WDM transmission line with alternating left side and right side filtering for adjacent channels, with alternating channel spacing of A and B, where A<B, and with two sets of channels orthogonally polarized. |
| 5889902 |
Monolithic integrated optoelectronic semiconductor component and process for manufacturing the s |
March 30, 1999 |
| An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide |
| 5355424 |
Method of operating a semiconductor device as an optical filter and semiconductor device for imp |
October 11, 1994 |
| A semiconductor device is operated as an optical filter. The semiconductor device has a substrate and a monolithically integrated branched waveguide structure disposed above the substrate, portions of the waveguide structure being divided into a plurality of regions by troughs, one of th |
| 5325387 |
Method of operating a semiconductor laser as a bistable opto-electronic component |
June 28, 1994 |
| A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing char |
| 5319667 |
Tunable semiconductor laser |
June 7, 1994 |
| An interferometric semiconductor laser includes a cavity in the form of a Y and at east three individually actuatable active segments. A central segment couples together the individually actuatable active segments. The central segment is an active or passive segment that acts as a beam |
| 5313478 |
Method of operating a semiconductor laser as a mode-locked semiconductor laser and devices for i |
May 17, 1994 |
| A semiconductor laser that is monolithically integrated on a substrate and whose cavity has a branched structure that is simply contiguous in a topological sense, and which includes a plurality of regions that enclose the cavity, is operated as a mode-locked semiconductor laser, with an |
| 5285465 |
Optically controllable semiconductor laser |
February 8, 1994 |
| An optical device includes a semiconductor laser monolithically integrated on a substrate having a branched cavity extending above a plane that is coplanar with a base surface of the substrate, and an adjustable optical power light source for radiating light into the cavity of the se |
| 5252497 |
Method of characterizing optical parameters of opto-electronic components and apparatus for carr |
October 12, 1993 |
| In the commonly used methods for the coating of opto-electronic components, especially of semiconductor lasers, the layer thickness of a layer that is to be deposited is measured optically. The optical signal is converted into an electrical one with which the coating is controlled.The in |
