Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Mitsuhiro Ichijo Patents Inventor: Ichijo; Mitsuhiro Address: Atsugi, JP No. of patents: 23 Patents: Patent Number Title Of Patent Date Issued 7408191 Luminescent device and process of manufacturing the same August 5, 2008 In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) fr 7384828 Semiconductor film, semiconductor device and method of their production June 10, 2008 A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, 7368335 Semiconductor device and method of manufacturing the same May 6, 2008 The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region 7316947 Method of manufacturing a semiconductor device January 8, 2008 An object is to reduce the number of high temperature (equal to or greater than 600.degree. C.) heat treatment process steps and achieve lower temperature (equal to or less than 600.degree. C.) processes, and to simplify the process steps and increase throughput in a method of manufa 7306982 Method of manufacturing a semiconductor device December 11, 2007 It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600.degree. C.) and the employment of lower temperature processes (600.degree. C. or lower), and to achieve step simplification and throughput improvement. In the present in 7223446 Plasma CVD apparatus and dry cleaning method of the same May 29, 2007 In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency vo 7220613 Manufacturing method for semiconductor device May 22, 2007 The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation 7208394 Method of manufacturing a semiconductor device with a fluorine concentration April 24, 2007 At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamb 7199027 Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen April 3, 2007 There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a 7169689 Method of manufacturing a semiconductor device January 30, 2007 Contamination of an interface of respective films constituting a TFT due to an contaminant impurity in a clean room atmosphere becomes a great factor to lower the reliability of the TFT. Besides, when an impurity is added to a crystalline semiconductor film, its crystal structure is 7109074 Method of manufacturing a semiconductor device September 19, 2006 A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. 7034337 Semiconductor device and method of manufacturing the same April 25, 2006 The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region 6875674 Method of manufacturing a semiconductor device with fluorine concentration April 5, 2005 At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamb 6867077 Semiconductor device and method of manufacturing the same March 15, 2005 A barrier layer that meets three requirements, "withstand well against etching and protect a semiconductor film from an etchant as an etching stopper", "allow impurities to move in itself during heat treatment for gettering", and "have excellent reproducibility", is formed and used to 6821828 Method of manufacturing a semiconductor device November 23, 2004 A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. 6808968 Method of manufacturing a semiconductor device October 26, 2004 It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600.degree. C.) and the employment of lower temperature processes (600.degree. C. or lower), and to achieve step simplification and throughput improvement. In the present in 6794229 Manufacturing method for semiconductor device September 21, 2004 The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation 6743700 Semiconductor film, semiconductor device and method of their production June 1, 2004 A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, 6717181 Luminescent device having thin film transistor April 6, 2004 In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) fr 6703265 Semiconductor device and method of manufacturing the same March 9, 2004 The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region 6675816 Plasma CVD apparatus and dry cleaning method of the same January 13, 2004 In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency vo 6506636 Method of manufacturing a semiconductor device having a crystallized amorphous silicon film January 14, 2003 Contamination of an interface of respective films constituting a TFT due to an contaminant impurity in a clean room atmosphere becomes a great factor to lower the reliability of the TFT. Besides, when an impurity is added to a crystalline semiconductor film, its crystal structure is brok 5330578 Plasma treatment apparatus July 19, 1994 A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction cham       Recently Added Patents Surface mount optical coupler, method of mounting the same, and method of producing the same Laser power calibration in an optical disc drive Smart power switch for broadband communications network Dishwasher having a door supply housing and actuator operable to release variable supply volumes for different wash cycles Electronic endoscope apparatus which stores image data on recording medium Control apparatus, storage device, and head retraction controlling method Optical density changing element, optical element and photographing unit   Randomly Featured Patents Filter/separator for a vehicle air conditioning system Steam separating apparatus and separators used therein Method and apparatus for deriving additional gray levels in a multi-gray level halftone image Grooved handle for a knife Cold particle suspension and injection process for meat System and method for determining torque output of motor actuated valve operators Lavatory Electronic thermometer probe cover Aqueous colloidal dispersion of a compound of cerium and at least one other element chosen from among the rare earths, transition metals, aluminum, gallium and zirconium preparation process an Cathode-ray-tube display device with simplified fastening structure and assembly method © 2006-2008 PatentGenius. 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