| |
 |
Jeng-Huey Hwang Patents |
|
Inventor: Hwang; Jeng-Huey
Address: Hsin-Chu, TW
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7186657 |
Method for patterning HfO2-containing dielectric |
March 6, 2007 |
| A wafer has a trench, a STI layer formed in the trench, an HfO2-containing gate dielectric covering the wafer and the STI layer, a gate electrode formed on the HfO2-containing gate dielectric, and at least a spacer formed beside the gate electrode. The wafer is preheated and a bromin |
|
|
|
