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Yu-Hsiang Hung Patents |
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Inventor: Hung; Yu-Hsiang
Address: Kaohsiung, TW
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7371668 |
Method for making a metal oxide semiconductor device |
May 13, 2008 |
| A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, |
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