| Patent Number |
Title Of Patent |
Date Issued |
| 7419771 |
Method for forming a finely patterned resist |
September 2, 2008 |
| A method for reducing a critical dimension of a photoresist pattern while improving a line spacing between distal end portions of pattern lines wherein the method includes providing a substrate including an overlying resist; exposing the resist to an activating light source; baking the |
| 7341939 |
Method for patterning micro features by using developable bottom anti-reflection coating |
March 11, 2008 |
| In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the |
| 7241682 |
Method of forming a dual damascene structure |
July 10, 2007 |
| An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via |
| 7235348 |
Water soluble negative tone photoresist |
June 26, 2007 |
| In accordance with the objectives of the invention a new water soluble negative photoresist is provided for packing-and-unpacking (PAU) processing steps. |
| 7094686 |
Contact hole printing by packing and unpacking |
August 22, 2006 |
| A method is provided for the creation of contact holes. The invention provides two masks. The first mask, referred to as the packed mask, comprises the desired contact holes, which are part of the creation of a semiconductor device. To the packed mask are added padding holes in order |
| 6998198 |
Contact hole printing by packing and unpacking |
February 14, 2006 |
| A new method is provided for the creation of contact holes. The invention provides two masks. The first mask, referred to as the packed mask, comprises the desired contact holes, which are part of the creation of a semiconductor device. To the packed mask are added padding holes in order |
| 6905621 |
Method for preventing the etch transfer of sidelobes in contact hole patterns |
June 14, 2005 |
| A method is provided for removing sidelobes that are formed when patterning a positive photoresist layer with an Att. PSM, Alt. PSM or a binary mask with scattering bars. A water soluble negative tone photoresist is coated over the positive photoresist pattern and is exposed through a ma |
| 6900134 |
Method for forming openings in a substrate using bottom antireflective coatings |
May 31, 2005 |
| A method and system is disclosed for selectively forming a pattern for making openings in a substrate. A first set of openings are formed in a first photoresist layer coated on the substrate using a first mask. A developing bottom antireflective coating (BARC) layer is then formed over |
| 6664011 |
Hole printing by packing and unpacking using alternating phase-shifting masks |
December 16, 2003 |
| A new method is provided for the creation of contact holes. The DOF and MEF of closely packed holes can be improved using Alternating Phase Shifting Mask (Alt PSM) for the exposure of the holes. However, Alt PSM are dependent on hole density or hole separation and are less effective wher |
| 6538086 |
Polymer with a pericyclic protective group and resist composition containing the same |
March 25, 2003 |
| The present invention relates to a polymer with at least one pericyclic protective group such as 2-methyl-2-bicyclo[2,2,1]heptanyl. The resist composition containing the polymer can be used as a chemically amplified resist and exhibits strong etch resistance. In addition, a line-and-spac |
| 6488509 |
Plug filling for dual-damascene process |
December 3, 2002 |
| A method of fabricating a dual-damascene structure comprising the following steps. A structure having a patterned low-k material layer formed thereover is provided. The patterned low-k material layer having an upper surface and at least one via hole formed therethrough. A plug material |
| 6303725 |
Cyclic dione polymer |
October 16, 2001 |
| The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) ##STR1##whereinA and B may be the same or different and are independently selected from the group consisting |
| 6207779 |
Ring-opened polymer |
March 27, 2001 |
| The present invention provides a ring-opened polymer, which is prepared by reacting at least one pericyclic olefin elected from those represented by formulae (I) and (II) through ring-opening metathesis polymerization ##STR1##whereinA and B may be the same or different and are independen |
| 6197476 |
Photosensitive composition containing a cyclic dione polymer |
March 6, 2001 |
| The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) ##STR1##whereinA and B may be the same or different and are independently selected from the group consisting |
