| Patent Number |
Title Of Patent |
Date Issued |
| 7351654 |
Semiconductor device and method for producing the same |
April 1, 2008 |
| A method for producing a semiconductor device includes the steps of forming silicon crystal nuclei on a substrate, depositing first amorphous silicon, depositing second amorphous silicon, and crystallizing the first amorphous silicon and the second amorphous silicon by allowing the c |
| 7319434 |
Electronic equipment |
January 15, 2008 |
| According to one embodiment, an electronic equipment includes a keyboard unit having a metal plate, and a plurality of keys arranged on the metal plate, and an antenna member which is provided at a position above the metal plate of the keyboard unit and inside the arranged keys. The meta |
| 7043209 |
Electronic device and method of mounting radio antenna |
May 9, 2006 |
| An electronic device comprises first and second antennas for a first radio communication scheme that uses a diversity scheme, and a third antenna for a second radio communication scheme arranged between the first and second antennas. |
| 6967623 |
Electronic apparatus having an antenna with variable dielectric to optimize radio communications |
November 22, 2005 |
| An electronic apparatus has a first radio module configured to use a first frequency band, a second radio module configured to use a second frequency band which is different from the first frequency band, an antenna coupled to both the first radio module and the second radio module, a di |
| 6936833 |
Semiconductor device package having a switcher connecting plural processing elements |
August 30, 2005 |
| A package includes a plurality of processors 101-104 as processing elements. One of the processing elements is selected as a switcher 110 and the switcher is located at the center of the package. Each of the processors 101-104 includes a corresponding network interface 111-114 which |
| 6828188 |
Semiconductor device with high- and low-density regions of transistor elements on single semicon |
December 7, 2004 |
| A semiconductor device manufacturing process for forming a semiconductor device having a high density region and a low density region of transistor elements, includes forming a gate oxide film and gate electrodes on a semiconductor substrate surface. Then, a first nitride film is uniform |
| 6791499 |
Electronic apparatus and antenna installation method |
September 14, 2004 |
| Antenna elements for a wireless unit provided in a housing body are sandwiched between a housing base and a housing cover. The size and thickness of the apparatus housing are thus reduced, and the structure of installing the antenna elements is simplified into an economically advanta |
| 6448172 |
Manufacturing method of forming interconnection in semiconductor device |
September 10, 2002 |
| In forming an interconnection having a structure in which an Al interconnection is covered with an interlayer insulating film, for the purpose of preventing voids to be created in the Al interconnection layer, together with suppressing the current leakage owing to the generation of e |
| 6399439 |
Method for manufacturing semiconductor device |
June 4, 2002 |
| Disclosed herein is a method for manufacturing a semiconductor device in which a hemispherical grain size of an inner and an outer wall surfaces of a cylindrical member is uniform to promote the increase of surface areas and to prevent short-circuit between the adjacent cylindrical membe |
| 6376328 |
Method for producing capacitor elements, and capacitor element |
April 23, 2002 |
| A silicon layer containing microcrystal is formed on a semiconductor substrate 10 having an amorphous silicon layer 61a formed on the surface thereof (t1 and t2). Continuously, HSGs (hemispherical grains) are formed, in the same furnace, on the silicon layer 61a using microcrystal on the |
| 6346480 |
Method for forming aluminum interconnection |
February 12, 2002 |
| In forming an interconnection having a structure in which an Al interconnection is covered with an interlayer insulating film, for the purpose of preventing voids to be created in the Al interconnection layer, together with suppressing the current leakage owing to the generation of e |
| 6342714 |
HSG lower electrode structure having a neck supported by a silicon layer |
January 29, 2002 |
| A hemispherical grained (HSG) lower electrode, and its manufacturing method, are disclosed in which the yield is enhanced by suppressing the depletion due to insufficient diffusion of an impurity into the hemispherical grains (abbreviated also as HSGs) to reduce the deterioration in |
| 6316329 |
Forming a trench mask comprising a DLC and ASH protecting layer |
November 13, 2001 |
| In a process for fabricating a semiconductor device, an DLC (diamond like carbon) film is formed on a principal surface of a semiconductor substrate, and an ashing protecting film is formed on the DLC film for protecting the DLC film from an ashing. A hard mask film having a resistin |
| 6300186 |
Method of measuring semiconductor device |
October 9, 2001 |
| There is provided a method of manufacturing a semiconductor device having a MOS transistor formed on a silicon substrate, and a stacked capacitor constituted by an information storage electrode provided above the MOS transistor through an insulating interlayer and a counter-electrode |
| 6248625 |
Manufacturing method of cylindrical-capacitor lower electrode |
June 19, 2001 |
| There is presented a method of manufacturing a cylindrical capacitor, which has the steps of forming a conductive film over the entire surface of a semiconductor substrate which includes a hole that is to function as a mould of a cylindrical-capacitor lower electrode, without changing th |
| 6228702 |
Method of manufacturing semiconductor device |
May 8, 2001 |
| In a semiconductor device fabricated according to a method of the present invention, a microelectronic capacitor is provided with a double-layered tantalum oxide film serving as a capacitance insulation film. The double-layered tantalum oxide film is constructed of: a first tantalum |
| 6218230 |
Method for producing capacitor having hemispherical grain |
April 17, 2001 |
| A first amorphous silicon layer is formed to connect to a portion of a capacitor contact plug, and then a second amorphous silicon layer and a third amorphous silicon layer are formed thereon. The first and the third amorphous silicon layers are formed so that they have a lower impurity |
| 6187623 |
Method of manufacturing semiconductor device |
February 13, 2001 |
| In a method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, silicon films are formed on the semiconductor substrate and at the same time first and second endpoint marker layers for dividing the silicon films |
| 6146966 |
Process for forming a capacitor incorporated in a semiconductor device |
November 14, 2000 |
| In a process of forming hemi-spherical silicon grains on an amorphous silicon film in accordance with the "crystal nucleation" process, in order to form crystal nuclei on a top surface and a side surface of the amorphous silicon film, SiH.sub.4 is irradiated onto the top and side sur |
| 6087212 |
Method for forming a storage node in a semiconductor memory |
July 11, 2000 |
| In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator |
| 6046082 |
Method for manufacturing semiconductor device |
April 4, 2000 |
| According to the present invention, there is provided a means which can prevent a formation failure of hemispherical silicon crystal grains of DRAM having a stacked capacitor structure having the hemispherical silicon crystal grains, can introduce a sufficient amount of an impurity into |
| 5959326 |
Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers |
September 28, 1999 |
| In a capacitor incorporated in a semiconductor device, a capacitor lower plate is formed of a first amorphous silicon film on an interlayer insulator film and a second amorphous silicon film stacked on the first amorphous silicon film. A crystallization preventing film is formed betw |
| 5953608 |
Method of forming a DRAM stacked capacitor using an etch blocking film of silicon oxide |
September 14, 1999 |
| A method of forming a stacked capacitor of a dynamic random access memory is disclose. The stacked capacitor is provided on a transistor and comprises first and second electrodes and a dielectric film sandwiched therebetween. The first electrode serving as a storage node. A first sil |
| 5938857 |
Method for rinsing and drying a substrate |
August 17, 1999 |
| In a wafer rinsing and drying method, a wet-treated wafer is put in a treating bath located in a closed chamber and is rinsed by a rising stream of a deionized water while supplying from position higher than the treating bath a vapor of IPA which is a water soluble solvent acting to |
| 5926709 |
Process of fabricating miniature memory cell having storage capacitor with wide surface area |
July 20, 1999 |
| A node contact hole is formed in an inter-level insulating layer through an anisotropic etching using an inner conductive side wall formed in a primary opening as an etching mask, and an outer conductive side wall concurrently formed from a doped polysilicon together with a conductive |
| 5897983 |
Method for forming a capacitor in a memory cell in a dynamic random access memory device |
April 27, 1999 |
| In a method for forming an annular-shaped and vertically extending bottom electrode of a memory cell capacitor, a conductive film is formed on an inter-layer insulator. A photo-resist material is applied on the conductive film to form a photo-resist film thereon. The photo-resist film |
| 5863602 |
Method for capturing gaseous impurities and semiconductor device manufacturing apparatus |
January 26, 1999 |
| Before an HSG-Si film is formed, silicon films are pre-coated on the inner wall of a reaction chamber (12) for forming the HSG-Si film on a wafer (14) and in a boat (25) which is used for accommodate and support the wafer (14) in the reaction chamber (12), and then the wafer (14) is fed |
| 5858852 |
Fabrication process of a stack type semiconductor capacitive element |
January 12, 1999 |
| At first, a silicon oxide layer is selectively formed on the surface of a semiconductor substrate. Next, a first amorphous silicon film doped with phosphorous in the concentration of about 1.times.10.sup.20 (atoms/cm.sup.3) and a non-doped second amorphous silicon film are deposited |
| 5858834 |
Method for forming cylindrical capacitor lower plate in semiconductor device |
January 12, 1999 |
| In a method for forming a cylindrical capacitor lower plate in a semiconductor device, a first insulating film, a first conducting film and a second insulating film are formed on a principal surface of a semiconductor substrate in the named order. A patterned photoresist film is form |
| 5616511 |
Method of fabricating a micro-trench storage capacitor |
April 1, 1997 |
| There is provided a method of fabricating a storage capacitor. A bottom semiconductor film having an electrical conductivity is formed for subsequent formation of a phase splitting glass film on the bottom semiconductor film. The phase splitting glass film is subjected to a heat trea |
| 5597760 |
Process of fabricating semiconductor device having capacitor increased in capacitance by roughen |
January 28, 1997 |
| Boundary layers of silicon nitride not greater than 1 nanometer thick are inserted between adjacent two phosphorous-doped polysilicon layers forming parts of an accumulating electrode of a capacitor so as to decrease the grain size of the polysilicon and, accordingly, increase the grain |
| 5567637 |
Method of fabricating a micro-trench floating gate electrode for flash memory cell |
October 22, 1996 |
| There is provided a method of fabrication a storage capacitor. A bottom semiconductor film having an electrical conductivity if formed for subsequent formation of a phase splitting glass film on the bottom semiconductor film. The phase splitting glass film is subjected to a heat trea |
| 5464791 |
Method of fabricating a micro-trench storage capacitor |
November 7, 1995 |
| A method of forming a stacked capacitor with a plurality of trench grooves. A silicon oxide film is deposited on a film having an electrical conductivity. A polysilicon film doped with an impurity is formed on the silicon oxide film. The polysilicon film is subjected to an etchant for |
| 5445986 |
Method of forming a roughened surface capacitor with two etching steps |
August 29, 1995 |
| In a method of manufacturing a semiconductor device having a capacitor constituted by a lower electrode, an upper electrode, and a dielectric film arranged between the lower and upper electrodes, a polysilicon film containing a Group V element as an impurity is formed. The first etching |
| 5372962 |
Method of making a semiconductor integrated circuit device having a capacitor with a porous surf |
December 13, 1994 |
| A capacitor incorporated in a semiconductor integrated circuit device is expected to have a large amount of capacitance without increase of the occupation area, and has a lower electrode increased in surface area by using a roughening technique selected from the group consisting of an |
