| Patent Number |
Title Of Patent |
Date Issued |
| 7449399 |
Method for fabricating a semiconductor device for reducing a surface potential |
November 11, 2008 |
| A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons ther |
| 7339207 |
Semiconductor device including a group III-V nitride semiconductor |
March 4, 2008 |
| A semiconductor device has: a buffer layer formed on a conductive substrate and made of Al.sub.xGa.sub.1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type Al.sub.yGa.sub.1-N; and a source electro |
| 7323376 |
Method for fabricating a semiconductor device including a group III nitride semiconductor |
January 29, 2008 |
| A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride sem |
| 7291872 |
Semiconductor device and method for fabricating the same |
November 6, 2007 |
| In the structure of a semiconductor device of the present invention, a first source electrode is connected to a conductive substrate through a via hole, and a second source electrode is formed. Thus, even if a high reverse voltage is applied between a gate electrode and a drain elect |
| 7247891 |
Semiconductor device and method for fabricating the same |
July 24, 2007 |
| A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor |
| 7238970 |
Semiconductor device and method for fabricating the same |
July 3, 2007 |
| A semiconductor device of the present invention comprises a Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity and at least one ohmic electrode formed on the Group III-V nitride semiconductor layer of gallium nitride or the like having n-typ |
| 7230285 |
Semiconductor device and hetero-junction bipolar transistor |
June 12, 2007 |
| In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base |
| 7217960 |
Semiconductor device |
May 15, 2007 |
| It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in I.sub.max, and further achieve an improvement in g.sub.m and a reduction in gate leakage current. In order to keep a thin bar |
| 7187014 |
Semiconductor device and method for fabricating the same |
March 6, 2007 |
| A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately |
| 7122451 |
Method for fabricating a semiconductor device including exposing a group III-V semiconductor to |
October 17, 2006 |
| A semiconductor device has an active region composed of a group III V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons ther |
| 7105907 |
Gallium nitride compound semiconductor device having schottky contact |
September 12, 2006 |
| A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, r |
| 7078743 |
Field effect transistor semiconductor device |
July 18, 2006 |
| A semiconductor device has: a buffer layer formed on a conductive substrate and made of Al.sub.xGa.sub.1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type Al.sub.yGa.sub.1-yN; and a source electr |
| 7067642 |
Human nuclear protein having WW domain and polynucleotide encoding the same |
June 27, 2006 |
| An isolated and purified human nucleoprotein containing the amino acid sequence of SEQ ID NO:1; a polynucleotide encoding this protein; and an antibody against this protein. The above protein and antibody are useful in diagnosing and treating the pathogenic conditions of cancer, etc. The |
| 7037817 |
Semiconductor device and method for fabricating the same |
May 2, 2006 |
| A semiconductor device has a first semiconductor layer composed of a group III V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulat |
| 7026261 |
Method for fabricating semiconductor device |
April 11, 2006 |
| A semiconductor layer formed on one surface of a substrate is irradiated with light from the other surface of the substrate to thermally decompose part of a region of the semiconductor layer in contact with the substrate, thereby forming a thermally decomposed layer. Thereafter, the |
| 6933181 |
Method for fabricating semiconductor device |
August 23, 2005 |
| In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is unco |
| 6770922 |
Semiconductor device composed of a group III-V nitride semiconductor |
August 3, 2004 |
| A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating |
| 6737683 |
Semiconductor device composed of a group III-V nitride semiconductor |
May 18, 2004 |
| A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons ther |
| 6476462 |
MOS-type semiconductor device and method for making same |
November 5, 2002 |
| An MOS-type semiconductor device comprises two semiconductors separated by an insulator. The two semiconductors comprise monocrystal semiconductors, each having a crystallographic orientation with respect to the insulator (or other crystallographic/semiconductor property) different to th |
| 5946923 |
Air conditioning system for vehicle |
September 7, 1999 |
| An air conditioning system for a vehicle is composed of a control unit which controls an air switching door, an element for detecting a clean-air level of the outside air and a vehicle speed sensor. The control unit controls the air-switching door to set to the outside-air mode when the |
| 5181161 |
Signal reproducing apparatus for optical recording and reproducing equipment with compensation o |
January 19, 1993 |
| An apparatus and a method for reproducing a signal, free of cross-talk and intersymbol interference, from an optical recording medium. The signal reproducing apparatus and method is for use in combination with an optical source for emitting a plurality of light beams directed to a center |
| 5121378 |
Optical head apparatus for focussing a minute light beam spot on a recording medium |
June 9, 1992 |
| In an optical head apparatus, a minute light beam spot is formed on a recording medium by a focusing lens. The focusing lens focuses light radiated from a light source to provide the minute light beam spot. Between the light source and the focusing lens, a light intensity or phase di |
| 4108137 |
Rotary piston engines |
August 22, 1978 |
| Rotary piston engines in which the rotor housing is formed with a peripheral intake port of relatively small area and at least one of the side housings is formed with a side intake port, and the side intake port is used only in high load engine operation. |
| 4103666 |
Fuel supply means for rotary piston engines |
August 1, 1978 |
| Rotary piston engine having a first intake port formed in rotor housing and one or more second intake ports formed either one or both of the rotor and side housings. The first intake port supplies relatively rich air-fuel mixture having mixing ratio of 2 to 6 and the second intake port s |
| 3943906 |
Intake system for an internal combustion engine |
March 16, 1976 |
| In an internal combustion engine having at least two separated combustion chambers and at least two separated intake passages respectively connected with said combustion chambers, a communicating passage is provided between the intake passages and shut-off valve means is provided in the |
