| Patent Number |
Title Of Patent |
Date Issued |
| 7248612 |
Semiconductor laser device with multi-dimensional-photonic-crystallized region |
July 24, 2007 |
| This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal forme |
| 7113532 |
Semiconductor laser device |
September 26, 2006 |
| A semiconductor laser device is one of AlGaInAs semiconductor laser devices, and has a multi-layer structure with a n-GaAs substrate on which a n-Al.sub.0.3Ga.sub.0.7As buffer layer, a n-Al.sub.0.47Ga.sub.0.53As clad layer, active layer portion, p-Al.sub.0.47Ga.sub.0.53As clad layer |
| 6741625 |
Semiconductor laser |
May 25, 2004 |
| The present invention provides a semiconductor laser including a plurality of light emission portions provided on the same substrate, each of which is adapted to emit laser beams with a multi-mode. A part of the plurality of light emission portions constitute a main light emission group, |
| 6633054 |
Method of fabricating a semiconductor light-emitting device and the semiconductor light-emitting |
October 14, 2003 |
| A method of fabricating a semiconductor light-emitting device in which the window structure can readily be obtained without relying upon an advanced process technology. In the method of the present invention, a first multi-layered film formed on a substrate is patterned into a groove |
| 6614820 |
Semiconductor laser driving method and optical disc apparatus |
September 2, 2003 |
| A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average |
| 6580737 |
Semiconductor laser driving method and optical disc apparatus |
June 17, 2003 |
| A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average |
| 6567440 |
Semiconductor laser driving method and optical disc apparatus |
May 20, 2003 |
| A semiconductor laser driving method, which is usable in an optical disc apparatus, for example, makes it possible to use a semiconductor laser in a low noise condition when the semiconductor laser is RF-modulated, by driving the semiconductor laser under a conditions where the average |
| 6487226 |
Semiconductor light emitting device |
November 26, 2002 |
| A semiconductor light emitting device having a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body comprises at least one of the p-type cladding layer and the n-type cladding layer has a lattice mismatch relative to the base bod |
| 6414976 |
Semiconductor light emitting device |
July 2, 2002 |
| A semiconductor light emitting device capable of correcting astigmatism difference well and oscillating stably also at the time of a high output operation, wherein a waveguide stripe width at the center of a stripe portion is constant, an inter-ridge recessed portion width (ridge sep |
| 6219312 |
Timer reservation apparatus of disk recording and reproducing apparatus and timer reservation in |
April 17, 2001 |
| A timer reservation apparatus of a disc recording and reproducing apparatus comprise a timer reservation information memorizing means for memorizing a timer reservation information signal; a timer reservation information recording means for recording in a predetermined area of a disc a t |
| 6195375 |
Self-pulsation type semiconductor laser |
February 27, 2001 |
| A self-pulsation type semiconductor laser having a high yield in manufacture and capable of stable self-pulsation when operating at a high temperature and at a high output, wherein in order to generate stable pulsation, the current is designed not to spread in the horizontal directio |
| 6185239 |
Semiconductor laser device |
February 6, 2001 |
| A semiconductor laser device with reduced threshold current and power consumption. Reflectivity Rr at a rear face of an optical cavity of the laser is set as large as possible. A monitor photodiode used for controlling an output form the laser is provided on a mount at a position to |
| 6084251 |
Semiconductor light emitting device with carrier diffusion suppressing layer |
July 4, 2000 |
| Disclosed is a semiconductor light emitting device improved in static characteristics such as operational current and prolonged in service life. On an n-type GaAs substrate are sequentially grown an n-type GaAs buffer layer having a thickness of 0.3 .mu.m; an n-type AlGaInP cladding laye |
| 5966397 |
Self-pulsating semiconductor laser |
October 12, 1999 |
| A semiconductor laser includes an n-type GaAs current blocking layer formed at both sides of a stripe portion made of an upper-lying portion of a p-type AlGaInP cladding layer, p-type GaInP intermediate layer and p-type GaAs cap layer to form a current blocking structure, and the p-type |
| 5953357 |
Semiconductor laser |
September 14, 1999 |
| An AlGaInP-based buried-ridge semiconductor laser includes an n-type GaAs current blocking layer 8 buried in opposite sides of a ridge stripe portion 7 which is made of an upper-layer portion of a p-type AlGaInP cladding layer 4, p-type GaInP intermediate layer 5 and p-type GaAs cont |
| 5255280 |
Semiconductor laser |
October 19, 1993 |
| A semiconductor laser has a substrate having a strip raised region on a principal surface thereof which comprises a {100} face, the strip raised region extending along a <011> axis. First lower and second upper cladding layers are disposed on the substrate, and an active layer is i |
| 5111469 |
Semiconductor laser |
May 5, 1992 |
| A semiconductor laser comprises a semiconductor substrate provided in its major surface with a strip mesa, and a laminated structure constructed by sequentially forming, through the epitaxial deposition of semiconductor materials on the major surface of the semiconductor substrate, at le |
| 4896331 |
Distributed feedback semiconductor laser |
January 23, 1990 |
| A distributed feedback semiconductor laser has a first cladding layer, an active layer, a guide layer on which a diffraction grating is formed and a second cladding layer, the effective thickness of the guide layer in the waveguide direction being made different in one region to change t |
| 4888784 |
Semiconductor laser device |
December 19, 1989 |
| A semiconductor laser device including a first semiconductor layer having a strip waveguide structure to obtain optical confinement and a second semiconductor layer having a ridge waveguide structure for defining an electrical current passage region. The strip waveguide structure has a |
| 4833687 |
Distributed feedback semiconductor laser |
May 23, 1989 |
| A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passin |
| 4807245 |
Distributed-feedback type semiconductor laser |
February 21, 1989 |
| A distributed-feedback type semiconductor laser device having an active layer arranged between a pair of clad layers is provided with a stripe-shaped distributed-feedback mechanism, for example, having the configuration of a diffraction grating, and dummy regions of the same configur |
| 4716132 |
Method of manufacturing a distributed feedback type semiconductor device |
December 29, 1987 |
| A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which |
| 4496484 |
Penicillin derivatives |
January 29, 1985 |
| This invention provides a penicillin derivative of the formula and a salt thereof ##STR1## wherein X represents chlorine atom or bromine atom and R represents hydrogen atom or penicillin carboxy-protecting radical, and a process for preparing the derivative of the formula (I) and |
| 4368203 |
Antibiotics and derivatives thereof having .beta.-lactamase inhibitory activity and production t |
January 11, 1983 |
| A novel antibiotic substance of the formula ##STR1## wherein R.sub.1 is CH.sub.3 and R.sub.2 is --CH.sub.2 --CH.sub.2 -- or R.sub.1 is H and R.sub.2 is --CH.dbd.CH--; and R.sub.3 represents hydrogen, lower alkyl or triphenylmethyl,and including the salts of the compound of formula (I |
| 4318916 |
Antibiotic PS-5 and derivatives having .beta.-lactamase inhibitory activity and production there |
March 9, 1982 |
| A novel antibiotic substance and derivatives thereof, having strong antibiotic activity and .beta.-lactamase inhibiting effect and a method for producing the same by aerobic cultivation of Streptomyces A 271. |
