| Patent Number |
Title Of Patent |
Date Issued |
| 6614087 |
Semiconductor device |
September 2, 2003 |
| An object is to provide a semiconductor device which is free from such voltage oscillation as may cause malfunction of peripheral equipment. In a semiconductor device having a pin structure, the impurity concentration gradient in an n.sup.+ layer (103) serving as a buffer layer is set eq |
| 6552413 |
Diode |
April 22, 2003 |
| Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage has a great value. An N layer 101 and a P layer 102 are formed in a semiconductor substrate |
| 6521919 |
Semiconductor device of reduced thermal resistance and increased operating area |
February 18, 2003 |
| A semiconductor device is composed a semiconductor substrate having a first conducting-type first semiconductor layer, a second conducting-type second semiconductor layer, a first conducting-type third semiconductor layer, a second conducting-type fourth semiconductor layer and a first |
| 6489666 |
Semiconductor device with improved heat suppression in peripheral regions |
December 3, 2002 |
| A semiconductor device (102) comprises an N type semiconductor substrate (1). A P layer (22) is formed in a first surface (S1) of the semiconductor substrate (1), and a P layer (23) is formed in the semiconductor substrate (1) and in contact with the first surface (S1) and a second surfa |
| 6479882 |
Current-limiting device |
November 12, 2002 |
| The current-limiting device 1 includes a silicon substrate 2 having surfaces opposite to each other, and two electrodes 3 deposited respectively on the opposite surfaces of the silicon substrate. The silicon substrate 2 is of a three-layered structure including an N- layer 4 of a low |
| 6388306 |
Semiconductor device with rapid reverse recovery characteristic |
May 14, 2002 |
| An object is to obtain a semiconductor device having a PN junction which can suppress voltage oscillation without exerting any adverse effects. The film thickness of the N.sup.- layer (101) is set to satisfy both of a first condition that the depletion layer extending in the N.sup.- laye |
| 6388276 |
Reverse conducting thyristor |
May 14, 2002 |
| Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and avoid variations in insulation characteristics.A separation portion between a diode and a GTO |
