| Patent Number |
Title Of Patent |
Date Issued |
| 5491461 |
Magnetic field sensor on elemental semiconductor substrate with electric field reduction means |
February 13, 1996 |
| A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are des |
| 5398639 |
Solid state conversion of hexagonal to cubic-like boron nitride |
March 21, 1995 |
| Films of hexagonal boron nitride are converted to a highly desirable cubic-like phase of boron nitride. The transformation is achieved by annealing the hBN material at temperatures below 1000.degree. C. The conversion may be conducted in a hydrogen, nitrogen, ammonia, vacuum, or iner |
| 5314547 |
Rare earth slab doping of group III-V compounds |
May 24, 1994 |
| A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic |
| 5232862 |
Method of fabricating a transistor having a cubic boron nitride layer |
August 3, 1993 |
| A multilayer structure for use in forming a transistor which may be suitable for high temperature applications is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cub |
| 5184106 |
Magnetic field sensor with improved electron mobility |
February 2, 1993 |
| A magnetic field sensor, such as a magnetoresistor, having improved electron mobility comprises a substrate of an insulating semiconductor material, such as gallium arsenide or indium phosphide, having on a surface thereof a narrow strip of a thin active film. The active film has a t |
| 5173758 |
Hall generator with four arms |
December 22, 1992 |
| A Hall generator includes a substrate body of single crystalline semi-insulating gallium arsenide having a surface. A thin layer, no greater than about 5 micrometers in thickness, of single crystalline indium arsenide is on the surface of the body and is in the form of four arms join |
| 5153557 |
Magnetic field sensor contacts |
October 6, 1992 |
| A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof |
| 5142350 |
Transistor having cubic boron nitride layer |
August 25, 1992 |
| A multilayer structure for use in forming a transistor which may be suitable for high temperature applications is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cub |
| 5117543 |
Method of making indium arsenide magnetoresistor |
June 2, 1992 |
| A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thicknesses below 5 micrometers, preferably b |
| 5081053 |
Method for forming a transistor having cubic boron nitride layer |
January 14, 1992 |
| A method for forming a transistor which may be suitable for high temperature application is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride i |
| 5074929 |
Method of making a permanent magnet sensor element with a soft magnetic layer |
December 24, 1991 |
| A speed sensor is made by assembling a permanent magnet, a soft magnetic layer on the magnet, a magnetoresistive sensor element of the soft magnetic layer, and a toothed ferritic member mounted for movement past the sensor element. The permanent magnet is surface treated to form, in |
| 5038131 |
Magnetoresistor |
August 6, 1991 |
| A magnetoresistor includes a thin film of a degenerately doped semiconductor material extending between conductive contacts at opposite edges of the film. The film has a plurality of openings therethrough which are arranged in spaced parallel rows with the openings in each row being |
| 4978938 |
Magnetoresistor |
December 18, 1990 |
| A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film out |
| 4939456 |
Position sensor including a thin film indium arsenide magnetoresistor on a permanent magnet |
July 3, 1990 |
| For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin |
| 4926226 |
Magnetic field sensors |
May 15, 1990 |
| A magnetodiode for use in a magnetic sensor using a semiconductive element (advantageously of a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by an n-i-p-i doping profile or superstructure. Such a superlattice is used to provide a region |
| 4926154 |
Indium arsenide magnetoresistor |
May 15, 1990 |
| A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickneses below 5 micrometers, preferably be |
| 4900687 |
Process for forming a magnetic field sensor |
February 13, 1990 |
| A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated t |
| 4847666 |
Hot electron transistors |
July 11, 1989 |
| In one embodiment a hot electron transistor uses lead telluride as the host crystal. The desired layers of increased band gap to provide the needed heterojunctions at the emitting and collecting junctions are realized either by substitution of europium and selenium in the host crystal or |
| 4843444 |
Magnetic field sensor |
June 27, 1989 |
| A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface n-type and p-type zones to which are provided electrical terminals. The element is treated t |
| 4782708 |
Thermocouple sensors |
November 8, 1988 |
| An air flow sensor which employs a thermocouple using a film of bismuth.sub.0.92 antimony.sub.0.08 to form junctions with gold, platinum or nickel strips and a resistive strip heater of the same metal. |
| 4747108 |
Lead-europium-selenide-telluride diode laser |
May 24, 1988 |
| A double heterojunction lead salt semiconductor diode laser having an optical cavity of PbEuSeTe alloy with a quantum well having reduced Eu concentration disposed to one side of the optical cavity, the optical cavity having a given lattice constant and index of refraction. The optic |
