| Patent Number |
Title Of Patent |
Date Issued |
| 6773169 |
Method for coupling a surface-oriented opto-electronic element with an optical fiber and opto-el |
August 10, 2004 |
| A method for coupling a surface-oriented opto-electronic element, particularly, a VCSEL laser diode, an LED, or a photodiode, with an optical fiber and an opto-electronic element for carrying out such a method, the opto-electronic element having a rotationally symmetrical protruding |
| 6111272 |
Semiconductor light source formed of layer stack with total thickness of 50 microns |
August 29, 2000 |
| A semiconductor light source with low photon absorption is not only structurally simple, but is also easy to produce. The light source is formed of a layer stack with a total thickness of 50 .mu.m which is secured at a separate carrier body and connected to contacts of the carrier bo |
| 5400419 |
Bidirectional optical transmission and reception module |
March 21, 1995 |
| A bidirectional optical transmission and reception module includes a substrate having one surface provided with waveguides and mirrors for deflecting radiation into the substrate and on an opposite surface of the substrate is provided a laser diode serving as a transmitter, a photodiode |
| 5195150 |
Optoelectronic device for outfeed and infeed of radiation |
March 16, 1993 |
| An optoelectronic device for outfeed and infeed of radiation into and out of a waveguide having the waveguide disposed on a substrate and provided with a mirror for reflecting the light through the substrate. The device includes at least a plano-convex lens being integrated on a surface |
| 5065207 |
Optoelectronic circuit with diodes and waveguides |
November 12, 1991 |
| Optoelectronic circuit in a semiconductor component having a branching waveguide. A respective optical amplifier constructed as a diode is integrated in each branch of this waveguide and the doping of the materials surrounding the active layer of these diodes is selected such that ea |
| 5008893 |
Tunable semiconductor laser |
April 16, 1991 |
| A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a |
| 4987576 |
Electrically tunable semiconductor laser with ridge waveguide |
January 22, 1991 |
| Electrically tunable semiconductor laser with ridge waveguide. A semiconductor laser with MCRW structure has an intermediate layer grown on an active layer, a stripe-shaped tuning layer that is flanked by a first lateral region having a first tuning contact and by a second lateral re |
| 4845723 |
Laser transmitter arrangement |
July 4, 1989 |
| A laser transmitter arrangement includes a plurality of laterally coupled semiconductor lasers along with drive components integrated on a single semiconductor body. The drive components include drop resistors, an inductance element, a capacitance element and are all applied to an in |
| 4841344 |
Light-emitting-diode (LED) with spherical lens |
June 20, 1989 |
| A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the |
| 4818722 |
Method for generating a strip waveguide |
April 4, 1989 |
| A method for generating a strip laser in a buried hetero-structure composed of layers, wherein a raised strip is etched out of the layer structure and the strip is laterally etched with an erosion melt. The lateral edges of the laser active layer are protected by leaving them covered wit |
| 4768199 |
Mechanism for self-adjusting positioning of a semiconductor laser relative to an optical fiber t |
August 30, 1988 |
| A mechanism for self-adjusting positioning of a glass fiber to a semiconductor laser chip includes an adjustment member with a groove into which a mesa ridge of the laser chip is secured and into which the glass fiber is placed. |
| 4747649 |
Monolithically integrated WDM demultiplex module and method of manufacture of such module |
May 31, 1988 |
| A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in t |
| 4744088 |
Semiconductor laser array with focused emission |
May 10, 1988 |
| A semiconductor laser array having laser active strips optically coupled to one another, wherein only every second laser active strip emits laser energy so that one main emission lobe appears. |
| 4742525 |
Coupled laser diode arrangement |
May 3, 1988 |
| An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides |
| 4740259 |
Method of making a light-emitting-diode (led) with spherical lens |
April 26, 1988 |
| A light-emitting diode has a lens secured in self-adjusted fashion to a mesa surface of a semiconductor body by means of adhesive. The mesa surface is substantially perpendicular and centered with an emission axis of the light-emitting diode. Preferably, the lens is spherical and the |
| 4683574 |
Semiconductor laser diode with buried hetero-structure |
July 28, 1987 |
| A laser diode and a method of making the same, the diode having a semiconductor substrate, and a plurality of strip shaped heterogenous layers sequentially arranged vertically on the substrate, the heterogenous layers between them providing a strip shaped laser active zone. Additional |
| 4674095 |
Laser diode array |
June 16, 1987 |
| A laser diode array has laser diode strips divided into groups which are separated from one another by zones having a damping or attenuation effect for radiation generated in the diodes. A maximum number of laser diode strips provided within each group is determined such that super radia |
| 4406245 |
Device for epitaxial depositing layers from a liquid phase |
September 27, 1983 |
| A device for simultaneously producing a plurality of substrate disks each having a plurality of different layers by a liquid phase epitaxy as each substrate disk is moved sequentially through different melts contained in the liquid phase characterized by a first unit having tongues slida |
