| Patent Number |
Title Of Patent |
Date Issued |
| 7135064 |
Silica-based coating film on substrate and coating solution therefor |
November 14, 2006 |
| A silica-based coating film having a low dielectric constant not exceeding 2.5 can be formed on the surface of a substrate to serve as a planarizing layer or an interlayer insulating layer by coating the surface with a unique coating solution containing a hydrolysis-condensation product |
| 6995096 |
Method for forming multi-layer wiring structure |
February 7, 2006 |
| For suppressing decomposition of an organic group (for example, a CH.sub.3 group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer direct |
| 6875262 |
Silica-based coating film on substrate and coating solution therefor |
April 5, 2005 |
| A silica-based coating film having a low dielectric constant not exceeding 2.5 can be formed on the surface of a substrate to serve as a planarizing layer or an interlayer insulating layer by coating the surface with a unique coating solution containing a hydrolysis-condensation product |
| 6767839 |
Method for forming multi-layer wiring structure |
July 27, 2004 |
| A method for suppressing the cutting of bonds between organic radical (for example, CH.sub.3 -radical) or H-radical and Si atom in SOG film during an ashing process, thereby maintaining a low dielectric constant, after wiring gutters are formed through etching on organic or inorganic SOG |
| 6723633 |
Method for forming multi-layer wiring structure |
April 20, 2004 |
| For suppressing decomposition of an organic group (for example, a CH.sub.3 group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer direct |
| 6515073 |
Anti-reflective coating-forming composition |
February 4, 2003 |
| An anti-reflective coating-forming composition comprising: (A) at least one compound selected from the group consisting of (i) a compound represented by the following formula (1):(ii) a compound represented by the following formula (2):and (iii) a compound represented by the following formul |
| 6503825 |
Method for forming multi-layer wiring structure |
January 7, 2003 |
| For suppressing decomposition of organic group (for example, CH.sub.3 group) during ashing process, which is bonded to Si atom of an organic SOG film or layer for use in flattening process, a method comprises following steps: forming an organic SOG layer directly or through a predetermin |
| 6338868 |
Method for the formation of a siliceous coating film |
January 15, 2002 |
| Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature h |
| 6214104 |
Coating solution for forming silica coating and method of forming silica coating |
April 10, 2001 |
| A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a g |
| 6190788 |
Method for the formation of a siliceous coating film |
February 20, 2001 |
| Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature h |
| 6074962 |
Method for the formation of silica-based coating film |
June 13, 2000 |
| Disclosed is a method for the formation of a silica-based coating film of a relatively large thickness in the manufacturing process of semiconductor devices and liquid crystal display panels by repeating the sequence consisting of coating of the surface with a coating solution containing |
| 5885654 |
Polysilazane-based coating solution for interlayer insulation |
March 23, 1999 |
| Proposed is a coating solution for the formation of an interlayer insulating film of silicon dioxide in the manufacture of various kinds of electronic devices having excellent storage stability and coating workability. The principal ingredient of the coating solution, of which the so |
| 5795378 |
Coating solution for silica-based coating film and method for the preparation thereof |
August 18, 1998 |
| Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capabl |
| 5762697 |
Coating solution for silica-based coating film and method for the preparation thereof |
June 9, 1998 |
| Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capabl |
| 5614271 |
Method for the formation of a silica-based coating film |
March 25, 1997 |
| Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the |
| 5614251 |
Method and liquid coating composition for the formation of silica-based coating film on substrat |
March 25, 1997 |
| Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydro |
| 5496402 |
Method and liquid coating composition for the formation of silica-based coating film on substrat |
March 5, 1996 |
| Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydro |
| 5457153 |
Liquid coating composition |
October 10, 1995 |
| Proposed is an aqueous coating composition based on a polyvinyl alcohol suitable for use to provide a protective film on various electronic materials. The composition comprises, as dissolved in water, a partially saponified polyvinyl alcohol having a specified average degree of polym |
| 4155762 |
Liquid developer for binary diazo copying materials |
May 22, 1979 |
| A liquid developer for use in developing binary diazo copying materials which consists essentially of an alkali metal salt of an aminoacid and/or an alkaline earth metal salt of an aminoacid. |
