| Patent Number |
Title Of Patent |
Date Issued |
| 7423902 |
Storage device and semiconductor apparatus |
September 9, 2008 |
| A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the low |
| 7372718 |
Storage and semiconductor device |
May 13, 2008 |
| A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high |
| 7345908 |
Memory device |
March 18, 2008 |
| The present invention is to provide a memory device including: a plurality of memory cells that each include a memory element having a memory layer and first and second electrodes that sandwich the memory layer, the plurality of memory cells being divided into memory blocks of m columns |
| 7336520 |
Storage device and semiconductor apparatus |
February 26, 2008 |
| A storage device includes a storage element having first and second terminals that cause a first electrical characteristic change when an electric signal of a first threshold level or higher is applied and that cause a second electrical characteristic change, which is asymmetrical to |
| 7242606 |
Storage apparatus and semiconductor apparatus |
July 10, 2007 |
| A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and |
| 7239542 |
Storage apparatus |
July 3, 2007 |
| The present invention provides a storage apparatus including a variable resistance element having a recording layer between two electrodes. In the variable resistance element, a resistance value of the recording layer is reversibly changed to one of a value in a high-resistance state |
| 7209379 |
Storage device and semiconductor device |
April 24, 2007 |
| A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and app |
