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Jean Paul Gueneau de Mussy Patents
Inventor:
Gueneau de Mussy; Jean Paul
Address:
Elsene, BE
No. of patents:
2
Patents:




Patent Number Title Of Patent Date Issued
7078352 Methods for selective integration of airgaps and devices made by such methods July 18, 2006
A method for the production of airgaps in a semiconductor device and device produced therefrom. The formation of airgaps is accomplished, in part, by chemically and/or mechanically changing the properties of a first dielectric layer locally, such that at least part of said first diel
7037851 Methods for selective integration of airgaps and devices made by such methods May 2, 2006
Method for the production of airgaps in a semiconductor device, the semiconductor device comprising a stack of layers, the stack of layers comprising at least one iteration of a sub-stack of layers.


 
 
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