| Patent Number |
Title Of Patent |
Date Issued |
| 6746905 |
Thin film transistor and manufacturing process therefor |
June 8, 2004 |
| An object of this invention is to provide a manufacturing process and structure of a thin film transistor having high productivity in which the resistance of a gate electrode wiring line can be decreased, an active layer and source and drain electrodes form an ohmic contact, and the |
| 6670641 |
Thin film transistor, method of manufacturing the same and thin film transistor liquid crystal d |
December 30, 2003 |
| A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a |
| 6372083 |
Method of manufacturing semiconductor device and apparatus for manufacturing the same |
April 16, 2002 |
| In manufacturing a thin-film transistor on a glass substrate, a first thin film consisting of an amorphous silicon thin film is formed on the glass substrate, and a second thin film is formed on the first thin film. Then, this second thin film is etched to form a mask pattern. A dopant i |
| 6313002 |
Ion-implantation method applicable to manufacture of a TFT for use in a liquid crystal display a |
November 6, 2001 |
| The present invention relates to a method of manufacturing a thin film transistor for use in a liquid crystal display apparatus or the like. In the method, impurity ions are implanted into a semiconductor by intermittently generating a plasma which generates impurity ions, for a pred |
| 6146929 |
Method for manufacturing semiconductor device using multiple steps continuously without exposing |
November 14, 2000 |
| In manufacturing a thin-film transistor on a glass substrate, a first thin film consisting of an amorphous silicon thin film is formed on the glass substrate, and a second thin film is formed on the first thin film. Then, this second thin film is etched to form a mask pattern. A dopant i |
| 6096585 |
Method of manufacturing thin film transistor |
August 1, 2000 |
| A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a |
| 5773844 |
Method of forming a polycrystalline silicon layer, a thin film transistor having the polycrystal |
June 30, 1998 |
| A thin film transistor includes an amorphous silicon layer formed on a substrate, a gate insulator formed on the amorphous silicon layer, a gate electrode formed on the gate insulator, source and drain contact regions of polycrystalline silicon formed in the amorphous silicon layer on bo |
| 5614731 |
Thin-film transistor element having a structure promoting reduction of light-induced leakage cur |
March 25, 1997 |
| A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode la |
