| Patent Number |
Title Of Patent |
Date Issued |
| 7316981 |
Method of removing silicon from a substrate |
January 8, 2008 |
| A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditi |
| 7273796 |
Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fa |
September 25, 2007 |
| A method of fabricating integrated circuitry includes depositing a spin-on-dielectric over a semiconductor substrate. The spin-on-dielectric comprises a polysilazane. Only some of the polysilazane is etched from the semiconductor substrate. Such etching comprises exposure to an etchi |
| 7205245 |
Method of forming trench isolation within a semiconductor substrate |
April 17, 2007 |
| A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent |
| 7166539 |
Wet etching method of removing silicon from a substrate |
January 23, 2007 |
| A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditi |
| 7135381 |
Wet etching method of removing silicon from a substrate and method of forming trench isolation |
November 14, 2006 |
| A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditi |
| 7030034 |
Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum |
April 18, 2006 |
| A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent |
| 6790786 |
Etching processes for integrated circuit manufacturing including methods of forming capacitors |
September 14, 2004 |
| The invention includes semiconductor processing methods, including methods of forming capacitors. In one implementation, a semiconductor processing method includes providing a semiconductor substrate comprising a layer comprising at least one metal in elemental or metal alloy form. The m |
