| Patent Number |
Title Of Patent |
Date Issued |
| 7105866 |
Heterojunction tunneling diodes and process for fabricating same |
September 12, 2006 |
| High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an |
| 6594478 |
Self oscillating mixer |
July 15, 2003 |
| A self oscillating mixer circuit includes a dual gate FET, an NDR device coupled to a first gate of the FET, and a first bias input circuit adapted to couple a first bias voltage across the NDR device. The first bias voltage controls operation of the NDR device within an NDR region of th |
| 6590236 |
Semiconductor structure for use with high-frequency signals |
July 8, 2003 |
| High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an |
| 6255710 |
3-D smart power IC |
July 3, 2001 |
| An integrated smart power circuit including a power semiconductor device fabricated on a conducting substrate with a source positioned adjacent the upper surface of the substrate, a control terminal between the upper and lower surfaces, and a drain positioned adjacent the lower surface o |
| 6204513 |
Heterostructure interband tunneling diode |
March 20, 2001 |
| A heterostructure interband tunneling diode includes a contact layer comprising indium gallium arsenide of a first conductivity type, an injection layer comprising indium gallium arsenide of a second conductivity type, a first doped layer of the first conductivity type positioned adj |
| 5942952 |
VCO with multiple negative differential resistance devices |
August 24, 1999 |
| A VCO includes a transistor having a plurality of negative differential resistance devices coupled in series to the source terminal of the transistor, with each of the devices having a negative differential resistance operating region. Biasing circuits are coupled to the drain and ga |
| 5425043 |
Semiconductor laser |
June 13, 1995 |
| In a form of the disclosure an array of coupled cavities (called minicavities) of a QWH semiconductor laser are defined by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. The native oxide confin |
| 5353295 |
Semiconductor laser device with coupled cavities |
October 4, 1994 |
| In a form of the disclosure an array of coupled cavities (called minicavities) of a QWH semiconductor laser are defined by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. The native oxide confin |
