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Hitoshi Ebata Patents
Inventor:
Ebata; Hitoshi
Address:
Mishima, JP
No. of patents:
10
Patents:




Patent Number Title Of Patent Date Issued
RE33326 Semiconductor vapor phase growing apparatus September 11, 1990
In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control dev
5244500 Process control system of semiconductor vapor phase growth apparatus September 14, 1993
In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequenc
4982693 Semiconductor vapor phase growing apparatus January 8, 1991
In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor o
4807561 Semiconductor vapor phase growth apparatus February 28, 1989
A vapor phase growth substrate is conveyed into a heated atomosphere, and vapor phase growth gas is supplied from a nozzle connected to a gas supply means to the substrate in the middle portion of conveyance. Process program information relating to the conveying speed of the substrate, t
4772485 Process control system of semiconductor vapor phase growing apparatus September 20, 1988
In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequenc
4770121 Semiconductor vapor phase growing apparatus September 13, 1988
An apparatus for positioning a plurality of semiconductor substrates on a movable, support in a desired pattern, in a semiconductor vapor phase growing apparatus. A memory is provided for storing two dimensional data corresponding to the desired pattern. The desired pattern is predetermi
4430959 Semiconductor vapor phase growing apparatus February 14, 1984
In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control dev
4305128 Method and apparatus for controlling orientation of tools December 8, 1981
When cutting a groove of a predetermined contour through a plate shaped workpiece with a fret saw blade, various program data regarding the direction of movements of the fret saw blade and the contour of the groove to be cut are stored in a memory device. The fret saw blade is moved in a
4288851 Method of determining position of openings adapted to receive fret saw blade of numerically cont September 8, 1981
In a machine for cutting grooves of a given pattern through a blank with a fret saw blade, openings for receiving the fret saw blade at the cutting starting points of the grooves are determined such that the center of each opening is positioned at a point spaced from a cutting start poin
4116101 Automatic fret sawing machines September 26, 1978
In an automatic sawing machine wherein a workpiece is moved in two orthogonal directions by a profile control or a numerical control so as to cut a groove of a predetermined profile, the opposite ends of the fret saw blade are synchronously driven by independent pulse motors so as to dir


 
 
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