| Patent Number |
Title Of Patent |
Date Issued |
| 6459133 |
Enhanced flux semiconductor device with mesa and method of manufacturing same |
October 1, 2002 |
| The invention relates to a so-called punch-through diode with a mesa (12) comprising, in succession, a first (1), a second (2) and a third (3) semiconductor region (1) of, respectively, a first, a second and the first conductivity type, which punch-through diode is provided with two |
| 6436785 |
Method of manufacturing semiconductor device with a tunnel diode |
August 20, 2002 |
| A semiconductor device with a tunnel diode comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types having high enough doping concentrations to provide a tunneling junction. Portions (2A, 3A) of the semiconductor regions adjoining the junction comprise |
| 6417536 |
Semiconductor device with memory capacitor having an electrode of Si1-x Gex |
July 9, 2002 |
| A semiconductor device with a semiconductor body (1) provided with a memory capacitor (12, 26) with a lower electrode (11, 23) consisting of a layer of semiconductor material (7, 23) having a rough surface (8, 24) formed by hemispherical grains (9, 25) of the relevant semiconductor mater |
| 6417526 |
Semiconductor device having a rectifying junction and method of manufacturing same |
July 9, 2002 |
| The invention relates to a semiconductor device having a rectifying junction (5) which is situated between two (semiconductor) regions (1, 2) of an opposite conductivity type. The second region (2), which includes silicon, is thicker and has a smaller doping concentration than the first |
| 6368946 |
Manufacture of a semiconductor device with an epitaxial semiconductor zone |
April 9, 2002 |
| A method of manufacturing a semiconductor device with an epitaxial semiconductor zone, wherebya first layer of insulating material, a first layer of non-monocrystalline silicon, and a second layer of insulating material are provided in that order on a surface of a silicon wafer,a window |
| 6242762 |
Semiconductor device with a tunnel diode and method of manufacturing same |
June 5, 2001 |
| A semiconductor device with a tunnel diode (23) is particularly suitable for various applications. Such a device comprises two mutually adjoining semiconductor regions (2, 3) of opposed conductivity types and having doping concentrations which are so high that breakdown between them lead |
| 6218222 |
Method of manufacturing a semiconductor device with a schottky junction |
April 17, 2001 |
| Devices with Schottky junctions are manufactured in that a semiconductor body with a substrate is provided with a first, for example n-type semiconductor region in the form of an epitaxial layer. A Schottky metal is locally provided thereon. A second semiconductor region is advantage |
| 6100152 |
Method of manufacturing a semiconductor device with a fast bipolar transistor |
August 8, 2000 |
| The invention relates to a method of manufacturing a discrete or integrated bipolar transistor comprising a base (1A), an emitter (2) and a collector (3). The base (1A) and a connecting region (1B) of the base (1A) are formed by providing a semiconductor body (10) with a doped semiconduc |
| 5915187 |
Method of manufacturing a semiconductor device with a pn junction provided through epitaxy |
June 22, 1999 |
| The invention relates to a method of manufacturing a semiconductor device with a pn junction, whereby an epitaxial layer (2) with a first zone (3) of a first conductivity type and with a second zone (4) of a second conductivity type opposed to the first is provided on a silicon substrate |
| 5902407 |
Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vap |
May 11, 1999 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. |
| 5895248 |
Manufacture of a semiconductor device with selectively deposited semiconductor zone |
April 20, 1999 |
| A method of a manufacturing a semiconductor device whereby a layer of insulating material and a layer of polycrystalline silicon are provided on a surface of a monocrystalline wafer. A window is then provided in the layer of polycrystalline silicon and a protective layer is formed on the |
| 5435682 |
Chemical vapor desposition system |
July 25, 1995 |
| This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system a |
| 5427620 |
Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vap |
June 27, 1995 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. |
| 5374315 |
Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vap |
December 20, 1994 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. |
| 5318634 |
Substrate supporting apparatus |
June 7, 1994 |
| A rotatable shaft supports and imparts rotary motion to a susceptor supporting spider to locate the susceptor and any substrate mounted thereon within a reaction chamber during a CVD process. The spider includes a plurality of radially extending arms having upwardly directed pegs for |
| 5198034 |
Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vap |
March 30, 1993 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. |
| 5117769 |
Drive shaft apparatus for a susceptor |
June 2, 1992 |
| A hollow drive shaft mounted within a tubular shaft depending from a reaction chamber supports a substrate receiving susceptor to effect rotation of the susceptor. |
| 5092728 |
Substrate loading apparatus for a CVD process |
March 3, 1992 |
| Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from |
| 4996942 |
Rotatable substrate supporting susceptor with temperature sensors |
March 5, 1991 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the wafer. The mechanism |
| 4993355 |
Susceptor with temperature sensing device |
February 19, 1991 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. |
| 4828224 |
Chemical vapor deposition system |
May 9, 1989 |
| This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and |
| 4821674 |
Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vap |
April 18, 1989 |
| A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. |
| 4798165 |
Apparatus for chemical vapor deposition using an axially symmetric gas flow |
January 17, 1989 |
| In a chemical vapor deposition chamber, an improved technique for providing deposition materials to the growth surface is described. The gas carrying deposition materials is constrained to have axial symmetry thereby providing a uniform deposition of materials on the substrate. The gas c |
| 4789771 |
Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatu |
December 6, 1988 |
| An apparatus and method for heating a substrate and associated rotatable susceptor in an epitaxial deposition reactor with an axially symmetric gas flow carrying deposition material include at least one chamber having a plurality of heat lamps. The chamber is generally symmetric with res |
| 4654509 |
Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatu |
March 31, 1987 |
| In an epitaxial deposition reactor with an axially symmetric gas flow carrying the deposition materials, apparatus and method for heating the substrate and associated susceptor uniformly is described. The apparatus includes at least one chamber having a plurality of heat lamps passing |
