| Patent Number |
Title Of Patent |
Date Issued |
| RE32351 |
Method of manufacturing a passivating composite comprising a silicon nitride (SI.sub.1 3N.sub.4) |
February 17, 1987 |
| The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow |
| 4827502 |
Environmentally protected housing for using central office protector modules outdoors |
May 2, 1989 |
| An environmentally protected housing for receiving a connector block in which a multiplicity of central office protector modules can be mounted. The housing is designed such that its surface area is slightly larger than the surface area of the connector block and when the block and modul |
| 4698031 |
Center barrier for wire gripping devices |
October 6, 1987 |
| A barrier for a wire gripping device of the type wherein a tapered jaw assembly is slideably mounted within a tapered tubular shell defining an axis and having an opening at one axial end thereof, and wherein a pilot cup is disposed in the end opening for surroundingly engaging a termina |
| 4668973 |
Semiconductor device passivated with phosphosilicate glass over silicon nitride |
May 26, 1987 |
| The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow |
| 4420503 |
Low temperature elevated pressure glass flow/re-flow process |
December 13, 1983 |
| A method of reducing the time and temperature for either flowing or re-flowing a glass layer on a semiconductor device is described. The method involves conducting the flow or re-flow process steps at an elevated pressure which reduces both the time and the temperature required to ac |
| 4273805 |
Passivating composite for a semiconductor device comprising a silicon nitride (Si.sub.1 3N.sub.4 |
June 16, 1981 |
| The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow |
| 4217605 |
Comb filter employing a charge transfer device with plural mutually proportioned signal charge i |
August 12, 1980 |
| A comb filter comprising a charge transfer device (CTD) structure for separating frequency interleaved luminance and chrominance components of a composite color television signal directly within the CTD structure. The CTD structure has first and second pairs of input sections of subs |
| 4160273 |
Digital memory addressing system |
July 3, 1979 |
| A digital memory may be addressed with an analog signal utilizing a circuit comprising a digital to analog converter. A comparator compares the output of the digital to analog converter to the analog address signal. The output of the comparator is coupled to means for incrementing and |
| 4126836 |
Balanced capacitance charge transfer device |
November 21, 1978 |
| An arrangement of charge transfer devices comprising a main signal transfer path defined by first and second sets of charge transfer electrodes, and an auxiliary path independent of the main path including a predetermined number of electrodes. Capacitances are respectively associated wit |
| 4006878 |
Concrete form assembly |
February 8, 1977 |
| A concrete form assembly comprises spaced apart form members that are retained in position during concrete pouring by an arrangement that includes spacer elements, plastic tie rods, and anchors. The anchors are on the outsides of the forms and grip the tie rods. Each anchor comprises |
