| Patent Number |
Title Of Patent |
Date Issued |
| 7008877 |
Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias |
March 7, 2006 |
| The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the v |
| 6544696 |
Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask |
April 8, 2003 |
| An embedded attenuated phase shift mask ("EAPSM") includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active |
| 6444275 |
Method for remote plasma deposition of fluoropolymer films |
September 3, 2002 |
| A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gas |
| 6243112 |
High density remote plasma deposited fluoropolymer films |
June 5, 2001 |
| A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gas |
| 5624529 |
Dry etching method for compound semiconductors |
April 29, 1997 |
| A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of |
