| Patent Number |
Title Of Patent |
Date Issued |
| 7085301 |
Photonic crystal single transverse mode defect structure for vertical cavity surface emitting la |
August 1, 2006 |
| The invention is directed to a photonic crystal defect structure for a vertical cavity surface emitting laser (VCSEL). In accordance with the invention, a set of holes is formed in a pattern with one or more missing holes forming a defect in the pattern of the photonic crystal, according |
| 6931042 |
Long wavelength vertical cavity surface emitting laser |
August 16, 2005 |
| Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors |
| 6608846 |
Bistable laser device with multiple coupled active vertical-cavity resonators |
August 19, 2003 |
| A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can |
| 6600761 |
Semiconductor laser with multiple lasing wavelengths |
July 29, 2003 |
| A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths |
| 6567454 |
Coupled-resonator vertical-cavity lasers with two active gain regions |
May 20, 2003 |
| A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties. |
| 6258615 |
Method of varying a characteristic of an optical vertical cavity structure formed by metalorgani |
July 10, 2001 |
| A process for forming an array of vertical cavity optical resonant structures wherein the structures in the array have different detection or emission wavelengths. The process uses selective area growth (SAG) in conjunction with annular masks of differing dimensions to control the th |
| 5903590 |
Vertical-cavity surface-emitting laser device |
May 11, 1999 |
| A vertical-cavity surface-emitting laser device. The vertical-cavity surface-emitting laser (VCSEL) device comprises one or more VCSELs with each VCSEL having a mode-control region thereabout, with the mode-control region forming an optical cavity with an effective cavity length differen |
| 5712865 |
Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication there |
January 27, 1998 |
| A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq |
| 5559053 |
Vertical cavity semiconductor laser |
September 24, 1996 |
| This invention involves a vertical cavity surface emitting laser ("VCSEL") having a Group III-V semiconductor epitaxial mesa structure with an electrically insulating sidewall located on the mesa's sidewalls for confinement of the optical radiation generated in the laser. A suitably |
| 5493577 |
Efficient semiconductor light-emitting device and method |
February 20, 1996 |
| A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral |
| 5348912 |
Semiconductor surface emitting laser having enhanced optical confinement |
September 20, 1994 |
| The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material |
| 5345462 |
Semiconductor surface emitting laser having enhanced polarization control and transverse mode se |
September 6, 1994 |
| Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross section to regions have a le |
| 5316968 |
Method of making semiconductor surface emitting laser |
May 31, 1994 |
| The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over the active area by in situ m |
| 5275687 |
Process for removing surface contaminants from III-V semiconductors |
January 4, 1994 |
| In accordance with the invention, a contaminated III-V semiconductor surface is cleaned by the sequential steps of exposure to hydrogen plasma, chemical etching in chlorine and annealing in vacuum. In a preferred embodiment, a semiconductor of the gallium arsenide family is subjected to |
| 5212702 |
Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical outpu |
May 18, 1993 |
| The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over the active area by in situ m |
| 5212701 |
Semiconductor surface emitting laser having enhanced optical confinement |
May 18, 1993 |
| The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material |
