| Patent Number |
Title Of Patent |
Date Issued |
| 7452572 |
Procedure for preparing redox-active polymers on surfaces |
November 18, 2008 |
| This invention provides novel methods for the formation of redox-active polymers attached to surfaces. In certain embodiments, the methods involve providing redox-active molecules bearing at least a first reactive site or group and a second reactive site or group; and contacting the |
| 7348206 |
Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory application |
March 25, 2008 |
| This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O-- or an E |
| 7312100 |
In situ patterning of electrolyte for molecular information storage devices |
December 25, 2007 |
| This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a compound of formula: R-L.sup.2-M-L.sup.1-Z.sup.1 where Z.sup.1 is a surface attachment g |
| 7230268 |
Attachment of organic molecules to group III, IV or V substrates |
June 12, 2007 |
| This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information sto |
| 7223628 |
High temperature attachment of organic molecules to substrates |
May 29, 2007 |
| This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information sto |
| 7074519 |
Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device |
July 11, 2006 |
| This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated |
| 7061791 |
High density molecular memory device |
June 13, 2006 |
| This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient |
| 7042755 |
High density non-volatile memory device |
May 9, 2006 |
| This invention provides novel high density memory devices (FIG. 3) that are electrically addressable permitting effective reading and writing, that provide a high memory density (102), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis |
| 6943054 |
Attachment of organic molecules to group III, IV or V substrates |
September 13, 2005 |
| This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information sto |
| 6728129 |
Multistate triple-decker dyads in three distinct architectures for information storage applicati |
April 27, 2004 |
| This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient |
| 6674121 |
Method and system for molecular charge storage field effect transistor |
January 6, 2004 |
| A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthet |
| 6657884 |
High density non-volatile memory device |
December 2, 2003 |
| This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient |
| 6381169 |
High density non-volatile memory device |
April 30, 2002 |
| This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient |
| 6324091 |
Tightly coupled porphyrin macrocycles for molecular memory storage |
November 27, 2001 |
| This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient |
| 6208553 |
High density non-volatile memory device incorporating thiol-derivatized porphyrins |
March 27, 2001 |
| This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient |
