| Patent Number |
Title Of Patent |
Date Issued |
| 7414297 |
Capacitor constructions |
August 19, 2008 |
| The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across |
| 7411254 |
Semiconductor substrate |
August 12, 2008 |
| The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a crystalline form TiN |
| 7399499 |
Methods of gas delivery for deposition processes and methods of depositing material on a substra |
July 15, 2008 |
| Methods for depositing material onto workpieces, methods of controlling the delivery of gases in deposition processes, and apparatus for depositing materials onto workpieces. One embodiment of a method for depositing material onto a workpiece comprises placing a micro-device workpiec |
| 7396570 |
Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers |
July 8, 2008 |
| Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl.sub.4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl.sub.4 to silane for a first period of time. The ratio is sufficien |
| 7393563 |
Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers |
July 1, 2008 |
| Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl.sub.4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl.sub.4 to silane for a first period of time. The ratio is sufficient |
| 7390712 |
Methods of enhancing capacitors in integrated circuits |
June 24, 2008 |
| Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a c |
| 7388248 |
Dielectric relaxation memory |
June 17, 2008 |
| A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor struc |
| 7378354 |
Atomic layer deposition methods |
May 27, 2008 |
| The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is forme |
| 7374993 |
Methods of forming capacitors |
May 20, 2008 |
| A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containi |
| 7368382 |
Atomic layer deposition methods |
May 6, 2008 |
| The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is forme |
| 7368381 |
Methods of forming materials |
May 6, 2008 |
| The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reac |
| 7364988 |
Method of manufacturing gallium nitride based high-electron mobility devices |
April 29, 2008 |
| A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas |
| 7358554 |
Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product fo |
April 15, 2008 |
| An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane stresses, wherein re |
| 7358188 |
Method of forming conductive metal silicides by reaction of metal with silicon |
April 15, 2008 |
| The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a nitride, boride, car |
| 7355223 |
Vertical junction field effect transistor having an epitaxial gate |
April 8, 2008 |
| A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the tre |
| 7352023 |
Constructions comprising hafnium oxide |
April 1, 2008 |
| The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and or |
| 7344755 |
Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD react |
March 18, 2008 |
| The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by |
| 7329573 |
Methods of forming capacitors |
February 12, 2008 |
| A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containi |
| 7326984 |
MIS capacitor and method of formation |
February 5, 2008 |
| An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) is formed as a lower electrode. Prior to the dielectric formation, the hemispherical grained polysilicon layer may be optionally subjected to a nitridization or ann |
| 7326971 |
Gallium nitride based high-electron mobility devices |
February 5, 2008 |
| A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction be |
| 7323738 |
MIS capacitor and method of formation |
January 29, 2008 |
| An MIS capacitor with low leakage and high capacitance is disclosed. A layer of hemispherical grained polysilicon (HSG) is formed as a lower electrode. Prior to the dielectric formation, the hemispherical grained polysilicon layer may be optionally subjected to a nitridization or ann |
| 7323737 |
DRAM constructions and electronic systems |
January 29, 2008 |
| The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as |
| 7323064 |
Supercritical fluid technology for cleaning processing chambers and systems |
January 29, 2008 |
| The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The invention also includes a |
| 7320911 |
Methods of forming pluralities of capacitors |
January 22, 2008 |
| A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure compris |
| 7311942 |
Method for binding halide-based contaminants during formation of a titanium-based film |
December 25, 2007 |
| A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that cont |
| 7309889 |
Constructions comprising perovskite-type dielectric |
December 18, 2007 |
| The invention includes a capacitor construction. A capacitor electrode has a perovskite-type dielectric material thereover. The perovskite-type dielectric material has an edge region proximate the electrode, and a portion further from the electrode than the edge region. The portion has |
| 7303991 |
Atomic layer deposition methods |
December 4, 2007 |
| The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is forme |
| 7279398 |
Microfeature workpiece processing apparatus and methods for controlling deposition of materials |
October 9, 2007 |
| The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure with |
| 7279368 |
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate |
October 9, 2007 |
| A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the tre |
| 7276416 |
Method of forming a vertical transistor |
October 2, 2007 |
| The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first po |
| 7276117 |
Method of forming semi-insulating silicon carbide single crystal |
October 2, 2007 |
| Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent element(s) introduced |
| 7274061 |
Capacitor constructions |
September 25, 2007 |
| The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across |
| 7274059 |
Capacitor constructions |
September 25, 2007 |
| The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across |
| 7273791 |
Methods for forming a conductive structure using oxygen diffusion through one metal layer to oxi |
September 25, 2007 |
| A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal |
| 7273660 |
Mixed composition interface layer and method of forming |
September 25, 2007 |
| An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first che |
| 7271077 |
Deposition methods with time spaced and time abutting precursor pulses |
September 18, 2007 |
| An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precurso |
| 7268388 |
One-transistor composite-gate memory |
September 11, 2007 |
| One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be |
| 7268034 |
Methods of forming pluralities of capacitors, and integrated circuitry |
September 11, 2007 |
| A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure compris |
| 7262099 |
Methods of forming field effect transistors |
August 28, 2007 |
| A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material and the semiconductive material. The space comprises an outermost portion and a portion |
| 7259066 |
One-transistor composite-gate memory |
August 21, 2007 |
| One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be |
| 7258892 |
Methods and systems for controlling temperature during microfeature workpiece processing, e.g., |
August 21, 2007 |
| The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method th |
| 7253102 |
Methods for forming and integrated circuit structures containing enhanced-surface-area conductiv |
August 7, 2007 |
| An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as by chemical vapor |
| 7253085 |
Deposition methods |
August 7, 2007 |
| The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under con |
| 7253076 |
Methods for forming and integrated circuit structures containing ruthenium and tungsten containi |
August 7, 2007 |
| Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such ca |
| 7247561 |
Method of removing residual contaminants from an environment |
July 24, 2007 |
| A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product |
| 7241705 |
Methods of forming conductive contacts to source/drain regions and methods of forming local inte |
July 10, 2007 |
| The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor inc |
| 7235138 |
Microfeature workpiece processing apparatus and methods for batch deposition of materials on mic |
June 26, 2007 |
| The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. |
| 7232721 |
Structures and methods for enhancing capacitors in integrated circuits |
June 19, 2007 |
| Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a c |
| 7217630 |
Methods of forming hafnium oxide |
May 15, 2007 |
| The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and or |
| 7217617 |
Methods of forming a capacitor |
May 15, 2007 |
| A method of forming a capacitor having a capacitor dielectric layer comprising ABO.sub.3, where "A" is selected from the group consisting of Group IIA and Group IVB metal elements and mixtures thereof, where "B" is selected from the group consisting of Group IVA elements and mixtures |
