| Patent Number |
Title Of Patent |
Date Issued |
| 7344993 |
Low-pressure removal of photoresist and etch residue |
March 18, 2008 |
| A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrat |
| 7344991 |
Method and apparatus for multilayer photoresist dry development |
March 18, 2008 |
| A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH.sub.3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. |
| 7169440 |
Method for removing photoresist and etch residues |
January 30, 2007 |
| A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the |
| 6986851 |
Dry developing method |
January 17, 2006 |
| A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the |
| 6849559 |
Method for removing photoresist and etch residues |
February 1, 2005 |
| A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to th |
| 6670276 |
Plasma processing method |
December 30, 2003 |
| A wafer W is placed on a lower electrode 106 provided inside a processing chamber 102 of a plasma processing apparatus 100. A film constituted an organic polysiloxane, which is a Low-K material is formed at the wafer W. Plasma is generated inside the processing chamber 102 to implement a |
