| Patent Number |
Title Of Patent |
Date Issued |
| 6559495 |
Semiconductor memory cell device |
May 6, 2003 |
| In a memory cell area (A) of a semiconductor storage device, a capacitor (8) formed on a first insulating layer (5) formed so as to cover MOS transistors (3, 4) includes a pillar-shaped insulating member (8a), a first capacitance electrode (8b) formed on the side surface of the pilla |
| 6544827 |
Metal-gate field effect transistor and method for manufacturing the same |
April 8, 2003 |
| A metal gate MISFET comprises a metal gate electrode on a semiconductor substrate, a side wall insulation film, and a source-drain region which is formed on the surface of the semiconductor substrate on both sides of the side wall insulation film. Then, a cobalt silicide film is formed o |
| 6309515 |
Sputtering apparatus for sputtering high melting point metal and method for manufacturing semico |
October 30, 2001 |
| There is provided a method for manufacturing a semiconductor device for forming a silicide layer of metal of high melting point, wherein the metal of high melting point is processed in sputtering under a condition in which no deterioration is produced by the sputtering apparatus. There i |
| 6281094 |
Method of fabricating semiconductor device capable of providing MOSFET which is improved in a th |
August 28, 2001 |
| In a method of fabricating a semiconductor device by the use of a semiconductor substrate (1), boron ions (4) are implanted into the semiconductor substrate from a trench (3) which is formed to the semiconductor substrate. The trench is defined by a plurality of side surfaces and a b |
| 6051472 |
Semiconductor device and method of producing the same |
April 18, 2000 |
| A semiconductor device of the present invention and using trench isolation includes contact holes. Spacers are formed on the shoulder portions of a device region exposed in the contact holes. To form the spacers, a silicon oxide film is formed and then etched by anisotropic etching such |
| 5937286 |
Method for manufacturing semiconductor device |
August 10, 1999 |
| To form a device isolating deep trench adjacent to a well, the deep trench is formed by using, as a mask, a photoresist mask used for forming the well and a silicon oxide film or a polysilicon film formed on a semiconductor substrate and patterned by an etching using another photores |
| 5691225 |
Method for fabricating semiconductor device having CMOS structure |
November 25, 1997 |
| A semiconductor device having a CMOS structure having a low resistivity silicide layer in a source/drain region is fabricated. To realize silicide formation for resistivity reduction of the n-type source/drain region, an impurity-free silicon layer is formed thereon before forming a high |
| 5677233 |
Process of fabricating semiconductor device having isolating oxide rising out of groove |
October 14, 1997 |
| When an isolating oxide is formed in a silicon substrate, a side wall is formed on the inner wall of a mask consisting of a lower silicon oxide layer and an upper silicon nitride layer for forming a groove in the silicon substrate in such a manner as to be laterally spaced from the i |
