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Cammy Rene Abernathy Patents |
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Inventor: Abernathy; Cammy Rene
Address: Gainesville, FL
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6914273 |
GaN-type enhancement MOSFET using hetero structure |
July 5, 2005 |
| A GaN based enhancement mode MOSFET includes a GaN layer and a (Group III).sub.x Ga.sub.1-x N layer, such as an Al.sub.x Ga.sub.1-x N disposed on the GaN layer. The thickness of the Al.sub.x Ga.sub.1-x N layer is less than 20 nm to provide a negligible sheet carrier concentration in the |
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