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Cammy R. Abernathy Patents |
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Inventor: Abernathy; Cammy R.
Address: Scotch Plains, NJ
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5459097 |
Method for selectively growing aluminum-containing layers |
October 17, 1995 |
| In accordance with the invention, aluminum-containing layers are grown by molecular beam processes using as an arsenic precursor phenylarsine (PhAs). Because PhAs is more reactive than arsine and less reactive than arsenic, it decomposes selectively on III-V surfaces but not on mask |
| 5227006 |
Method for selectively growing gallium-containing layers |
July 13, 1993 |
| In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAs) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbo |
| 5171704 |
GaAs device fabrication utilizing metalorganic molecular beam epitaxy (MOMBE) |
December 15, 1992 |
| High carrier concentration, as well as abrupt change in such concentration in GaAs-based devices, is the consequence of selection of tin dopant-containing precursor compounds as used during layer growth. Alkyl tin compounds, as used during MetalOrganic Molecular Beam Epitaxy, are of |
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