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Tomohiko Abe Patents
Inventor:
Abe; Tomohiko
Address:
Tokyo, JP
No. of patents:
33
Patents:




Patent Number Title Of Patent Date Issued
6858977 Cathode-ray tube and cathode-ray tube manufacturing method February 22, 2005
The cathode-ray tube according to the present invention has on the inner surface of the funnel section of the body thereof a laminated layer comprising a first layer of black material, a metal backing layer and a second layer of black material.According to the configuration of the cathod
6646275 Charged particle beam exposure system and method November 11, 2003
A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a seco
6509568 Electrostatic deflector for electron beam exposure apparatus January 21, 2003
An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an in
6486479 Charged particle beam exposure system and method November 26, 2002
A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot
6465796 Charge-particle beam lithography system of blanking aperture array type October 15, 2002
Disclosed is a charged-particle beam lithography system in which deterioration of a BAA chip is prevented without a reduction in the magnitude of a charged-particle beam used for exposure. The charged-particle beam lithography system has a charged-particle beam emitter source and a c
6268606 Electrostatic deflector, for electron beam exposure apparatus, with reduced charge-up July 31, 2001
An electrostatic deflector of an electron beam exposure apparatus is disclosed. A cylindrical holding member is made of an insulating material. An electrode including a plurality of electrode members fixedly arranged in spaced relationship to each other and having at least a portion of t
6242751 Charged-particle-beam exposure device and charged-particle-beam exposure method June 5, 2001
A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a
6118129 Method and system for exposing an exposure pattern on an object by a charged particle beam which September 12, 2000
A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of
6055719 Method for manufacturing an electrostatic deflector May 2, 2000
The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the ch
5977548 Charged particle beam exposure system and method November 2, 1999
A charged particle beam exposure method including steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second
5969365 Charged-particle-beam exposure device and charged-particle-beam exposure method October 19, 1999
A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a
5965895 Method of providing changed particle beam exposure in which representative aligning marks on an October 12, 1999
A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions
5949078 Charged-particle-beam exposure device and charged-particle-beam exposure method September 7, 1999
An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first apertur
5920077 Charged particle beam exposure system July 6, 1999
A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot
5872366 Charged-particle-beam exposure device and charged-particle-beam exposure method February 16, 1999
An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first apertur
5841145 Method of and system for exposing pattern on object by charged particle beam November 24, 1998
By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact
5770862 Charged particle exposure apparatus, and a charged particle exposure method June 23, 1998
The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the ch
5757015 Charged-particle-beam exposure device and charged-particle-beam exposure method May 26, 1998
A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a
5721432 Method of and system for charged particle beam exposure February 24, 1998
To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the pre
5719402 Method of and system for charged particle beam exposure February 17, 1998
To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the prec
5614725 Charged particle beam exposure system and method March 25, 1997
A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a seco
5590048 Block exposure pattern data extracting system and method for charged particle beam exposure December 31, 1996
In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to o
5546319 Method of and system for charged particle beam exposure August 13, 1996
To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the p
5528048 Charged particle beam exposure system and method June 18, 1996
A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a seco
5430304 Blanking aperture array type charged particle beam exposure July 4, 1995
A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged partic
5391886 Charged particle beam exposure system and method of exposing a pattern on an object by such a ch February 21, 1995
A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and secon
5359202 Electron beam exposure apparatus employing blanking aperture array October 25, 1994
An electron beam exposure apparatus is provided with an electron gun emitting an electron beam, a blanking aperture array including a plurality of two-dimensionally arranged blanking apertures for selectively deflecting the electron beam passing through the blanking apertures in a pr
5304811 Lithography system using charged-particle beam and method of using the same April 19, 1994
A lithography system and a method of using the same, wherein a charged-particle beam is deflected to pass through a selected block of stencil pattern on a stencil mask and thereafter the beam forms an image of the stencil pattern on an objective, the lithography system comprising ast
5104573 Green light emitting phosphor April 14, 1992
A green light emitting phosphor comprising tetravalent elements added to a green light emitting phosphor, Y.sub.3 (Al,Ga).sub.5 O.sub.12 :Tb, wherein the green light emitting phosphor can prevent a so-called electron beam burning even when excited by electron beams of high energy. The gr
4839760 Read/write apparatus for disk cartridge June 13, 1989
A disk cartridge having a cleaning mechanism. The disk cartridge comprises a disk for peripheral storage of computer and a hard shell which is made of plastic and contains the disk.A liner is disposed between a disk and a shell. An opening is provided in one part of shell and a plate is
4801398 Method of preparing fluorescent material of small particle size January 31, 1989
A fluorescent material of small size is prepared by synthesizing a fluorescent material of predetermined molecular structure in a single phase, pulverizing the fluorescent material thus produced and then heat treating the pulverized material under conditions sufficient to recover the
4469619 Method of manufacturing a green phosphor September 4, 1984
A method for manufacturing a luminescent material having the formula:in which the raw materials for the synthesis are combined in appropriate amounts together with a flux consisting of barium fluoride, barium chloride, or mixtures of the two and then heated in a sealed state to a tempera
4252669 Luminescent material and method of making the same February 24, 1981
A luminescent material is disclosed which has the general formula:wherein M is at least one alkali metal selected from Li, Na, K, Rb, and Cs, x is from about 0 to about 0.3, y and z are densities (g-atom/mol Zn.sub.1-x Cd.sub.x S) of Ce and M relative to Zn.sub.1-x Cd.sub.x S, y is from


 
 
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